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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

DC/DC Flyback

Similar to booster converters in architecture and performance the simple flyback converter topology uses a mutually coupled inductor to store energy when current passes through and releasing the energy when the power is removed. However, the primary winding of the transformer replaces the inductor while the secondary provides the output. In the flyback configuration, the primary and secondary windings are utilized as two separate inductors.

Block diagram

設(shè)計(jì)考慮因素

  • 開(kāi)始采用PWM驅(qū)動(dòng)無(wú)刷直流電機(jī)控制
  • 電機(jī)驅(qū)動(dòng)MOSFET必須以低RDSon和良好的熱阻抗來(lái)滿足峰值高電流需求
  • 如果過(guò)載情況會(huì)降低電池和柵極電壓,則可能需要具有強(qiáng)線性模式性能的MOSFET來(lái)提供反向電池保護(hù)
  • MOSFET可能需要滿足UL2595等的具體間距要求
  • 為小尺寸優(yōu)化的電荷平衡MOSFET,通常裝在可移動(dòng)電池組中——每個(gè)電池一個(gè)

MOSFET and GaN FET Handbook

Drawing on over 20 years’ of experience, the MOSFET and GaN FET Application Handbook: A Power Design Engineer’s Guide brings together a comprehensive set of learning and reference materials relating to the use of MOSFETs and GaN FETs in real world systems.

Download your copy today 

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