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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

650 V e-mode GaN FETs

Optimized balance of voltage and power

Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for low-power 650 V applications. Offering superior switching performance due very low QC and QOSS values, they bring improved efficiency to 650 V AC/DC and DC/AC power conversion. As well as bringing significant space and BOM savings in BLDC and micro servo motor drives or LED drivers.

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650 V e-mode GaN FETs
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產(chǎn)品

型號 描述 狀態(tài) 快速訪問
GAN080-650EBE 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8?mm?x?8?mm package Production
GAN140-650EBE 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8?mm?x?8?mm package Production
GAN140-650FBE 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5?mm?x?6?mm package Production
GAN190-650EBE 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8?mm?x?8?mm package Production
GAN190-650FBE 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5?mm?x?6?mm package Production
GANE140-700BBA 700 V, 140 mOhm Gallium Nitride (GaN) FET in DPAK package Development
GANE190-700BBA 700 V, 190 mOhm Gallium Nitride (GaN) FET in DPAK package Development
GANE240-700BBA 700 V, 240 mOhm Gallium Nitride (GaN) FET in DPAK package Development
GANE350-650FBA 650 V, 350 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package Development
GANE350-700BBA 700 V, 350 mOhm Gallium Nitride (GaN) FET in DPAK package Development
Visit our documentation center for all documentation

Application note (2)

文件名稱 標(biāo)題 類型 日期
AN90041.pdf Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs Application note 2023-05-09
AN90021.pdf Power GaN technology: the need for efficient power conversion Application note 2020-08-14

Leaflet (2)

文件名稱 標(biāo)題 類型 日期
nexperia_document_leaflet_GaNFETs_2024-CHN.pdf Power GaN FETs Chinese Leaflet 2024-07-31
nexperia_document_leaflet_GaNFETs_2024.pdf Power GaN FETs Leaflet 2024-07-24

Marcom graphics (1)

文件名稱 標(biāo)題 類型 日期
DFN8080-8_SOT8074-1-combi_mk.png plastic thermal enhanced small outline package; no leads; 8 terminals; body: 8 x 8 x 0.9 mm Marcom graphics 2023-04-20

User manual (1)

文件名稱 標(biāo)題 類型 日期
UM90045.pdf NX-HB-GAN111UL 2.0 kW half-bridge evaluation board user guide User manual 2025-02-10

White paper (3)

文件名稱 標(biāo)題 類型 日期
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese.pdf Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN.pdf 白皮書: 功率GaN技術(shù): 高效功率轉(zhuǎn)換的需求 White paper 2020-08-17
nexperia_whitepaper_gan_need_for_efficient_conversion.pdf White paper: Power GaN technology: the need for efficient power conversion White paper 2020-07-23

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