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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產(chǎn)品(AEC-Q100/Q101)

用于電池隔離的ASFET

增強的SOA、穩(wěn)健性和最大電流

如今大多數(shù)手持和電池供電的工具和設備都依賴于多節(jié)鋰離子電池組。鋰離子電池具有能量密度高的優(yōu)點。但是在故障情況下，這可能會成為問題，因為它有可能導致大量不受控制的能量釋放，從而導致負載過熱和潛在的電路火災。要在安全隔離電池并關閉系統(tǒng)前以可控的方式處理大量放電，需要非常穩(wěn)健且具有高熱效的MOSFET。Nexperia最穩(wěn)健的LFPAK封裝器件的理想應用。   

用于電池隔離的ASFET專為多節(jié)電池供電設備而設計：

  • 在故障情況下，由于在故障引起深度放電時，大電流下的電路電感會產(chǎn)生電壓，因此電池隔離MOSFET通常會進入線性模式
  • 增強的SOA MOSFET繼續(xù)安全可控地運行，直到關閉為止，電池與負載電路完全隔離
  • 正常工作時，需要低導通電阻才能實現(xiàn)低傳導損耗，但需要優(yōu)化參數(shù)以實現(xiàn)安全的電池隔離
  • 穩(wěn)健的電池隔離MOSFET可用作設備批準的主要保護
  • 可能需要低Vt，因為電池保護IC可能只有2-3 V柵極驅動

參數(shù)搜索

ASFETs for battery systems and eFuse
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產(chǎn)品

型號 描述 狀態(tài) 快速訪問
PSMN0R9-30ULD N-channel 30 V, 0.87 mOhm, 300 A level Application Specific MOSFET in SOT1023A enhanced package for UL2595 Production
PSMN1R0-100ASF NextPower 100 V, 0.99 mOhm, N-channel MOSFET in CCPAK1212 package Production
PSMN1R0-100CSF NextPower 100 V, 1.04 mOhm, N-channel MOSFET in CCPAK1212i package Production
PSMN1R0-40SSH N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMN1R0-40ULD N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595 Production
PSMN1R0-40YLD N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN1R1-80ASF NextPower 80 V, 1.11 mOhm, N-channel MOSFET in CCPAK1212 package Production
PSMN1R1-80CSF NextPower 80 V, 1.16 mOhm, N-channel MOSFET in CCPAK1212i package Production
PSMN1R2-55SLH N-channel 55 V, 1.03 mOhm, 330 A logic level Application Specific MOSFET in LFPAK88 Production
PSMN1R3-100ASF NextPower 100 V, 1.3 mOhm, N-channel MOSFET in CCPAK1212 package Production
PSMN1R4-100CSF NextPower 100 V, 1.35 mOhm, N-channel MOSFET in CCPAK1212i package Production
PSMN1R5-50YLH N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E Production
PSMN2R0-55YLH N-channel 55 V, 2.1 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E Production
PSMN3R9-100YSF NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package Production
PSMNR51-25YLH N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMNR58-30YLH N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMNR60-25YLH N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
PSMNR70-30YLH N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
PSMNR70-40YSN N-channel 40 V, 0.81 mOhm, ASFET for Battery System in LFPAK56E Production
PSMNR90-40YLH N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology Production
PSMNR90-40YSN N-channel 40 V, 0.97 mOhm, ASFET for Battery System in LFPAK56E Production
PSMNR90-50SLH N-channel 50 V, 0.90 mOhm, 410 A logic level Application Specific MOSFET in LFPAK88 Production
PSMNR90-80ASF NextPower 80 V, 0.85 mOhm, N-channel MOSFET in CCPAK1212 package Production
PSMNR90-80CSF NextPower 80 V, 0.9 mOhm, N-channel MOSFET in CCPAK1212i package Production
Visit our documentation center for all documentation

Application note (3)
文件名稱 標題 類型 日期
AN90001.pdf Designing in MOSFETs for safe and reliable gate-drive operation Application note 2024-10-28
AN50006.pdf Power MOSFETs in linear mode Application note 2022-04-12
AN90016.pdf Maximum continuous currents in NEXPERIA LFPAK power MOSFETs Application note 2020-09-03

Leaflet (2)
文件名稱 標題 類型 日期
nexperia_document_leaflet_LFPAK88_2022_CHN.pdf LFPAK88 將功率密度提升到新高度 Leaflet 2022-03-10
nexperia_document_leaflet_LFPAK88_2022.pdf LFPAK88 - Driving power-density to the next level Leaflet 2022-03-09

Selection guide (1)
文件名稱 標題 類型 日期
Nexperia_Selection_guide_2023.pdf Nexperia Selection Guide 2023 Selection guide 2023-05-10

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