用于電池隔離的ASFET專為多節(jié)電池供電設(shè)備而設(shè)計(jì)：
- 在故障情況下，由于在故障引起深度放電時(shí)，大電流下的電路電感會(huì)產(chǎn)生電壓，因此電池隔離MOSFET通常會(huì)進(jìn)入線性模式
- 增強(qiáng)的SOA MOSFET繼續(xù)安全可控地運(yùn)行，直到關(guān)閉為止，電池與負(fù)載電路完全隔離
- 正常工作時(shí)，需要低導(dǎo)通電阻才能實(shí)現(xiàn)低傳導(dǎo)損耗，但需要優(yōu)化參數(shù)以實(shí)現(xiàn)安全的電池隔離
- 穩(wěn)健的電池隔離MOSFET可用作設(shè)備批準(zhǔn)的主要保護(hù)
- 可能需要低Vt，因?yàn)殡姵乇Ｗo(hù)IC可能只有2-3 V柵極驅(qū)動(dòng)
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產(chǎn)品
| 型號(hào) | 描述 | 狀態(tài) | 快速訪問 |
|---|---|---|---|
| PSMN0R9-30ULD | N-channel 30 V, 0.87 mOhm, 300 A level Application Specific MOSFET in SOT1023A enhanced package for UL2595 | Production | |
| PSMN1R0-100CSF | NextPower 100 V, 1.04 mOhm, N-channel MOSFET in CCPAK1212i package | Production | |
| PSMN1R0-40SSH | N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Production | |
| PSMN1R0-40ULD | N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595 | Production | |
| PSMN1R0-40YLD | N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN1R2-55SLH | N-channel 55 V, 1.03 mOhm, 330 A logic level Application Specific MOSFET in LFPAK88 | Production | |
| PSMN1R5-50YLH | N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E | Production | |
| PSMN1R5-60YSN | N-channel 60 V, 1.5 mOhm, ASFET for Battery System in LFPAK56E | Qualification | |
| PSMN2R0-55YLH | N-channel 55 V, 2.1 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E | Production | |
| PSMN3R9-100YSF | NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package | Production | |
| PSMNR51-25YLH | N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology | Production | |
| PSMNR58-30YLH | N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology | Production | |
| PSMNR60-25YLH | N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology | Production | |
| PSMNR70-30YLH | N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology | Production | |
| PSMNR70-40YSN | N-channel 40 V, 0.81 mOhm, ASFET for Battery System in LFPAK56E | Production | |
| PSMNR90-40YLH | N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology | Production | |
| PSMNR90-40YSN | N-channel 40 V, 0.97 mOhm, ASFET for Battery System in LFPAK56E | Production | |
| PSMNR90-50SLH | N-channel 50 V, 0.90 mOhm, 410 A logic level Application Specific MOSFET in LFPAK88 | Production |
Visit our documentation center for all documentation
Application note (3) |
|||
|---|---|---|---|
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
| AN90001.pdf | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2024-10-28 |
| AN50006.pdf | Power MOSFETs in linear mode | Application note | 2022-04-12 |
| AN90016.pdf | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2020-09-03 |
Leaflet (2) |
|||
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
| nexperia_document_leaflet_LFPAK88_2022_CHN.pdf | LFPAK88 將功率密度提升到新高度 | Leaflet | 2022-03-10 |
| nexperia_document_leaflet_LFPAK88_2022.pdf | LFPAK88 - Driving power-density to the next level | Leaflet | 2022-03-09 |
Selection guide (1) |
|||
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
| Nexperia_Selection_guide_2023.pdf | Nexperia Selection Guide 2023 | Selection guide | 2023-05-10 |
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