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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

CCPAK1212 MOSFETs

Parametric search

CCPAK1212 MOSFETs
Product status: Production
Nr of transistors: 1
Automotive qualified: N
Channel type: N
Tj [max]: 175 °C
Package version
SOT8000A (8)
SOT8005A (8)
SOT8000A
SOT8000A
SOT8005A
SOT8000A
SOT8005A
SOT8005A
SOT8005A
SOT8000A
SOT8005A
SOT8005A
SOT8000A
SOT8000A
SOT8005A
SOT8000A
SOT8000A
SOT8005A
Package version
Package name
CCPAK1212 (8)
CCPAK1212i (8)
CCPAK1212
CCPAK1212
CCPAK1212i
CCPAK1212
CCPAK1212i
CCPAK1212i
CCPAK1212i
CCPAK1212
CCPAK1212i
CCPAK1212i
CCPAK1212
CCPAK1212
CCPAK1212i
CCPAK1212
CCPAK1212
CCPAK1212i
Package name
Product status
Production (16)
Production
Production
Production
Production
Production
Production
Production
Production
Production
Production
Production
Production
Production
Production
Production
Production
Product status
Channel type
N (16)
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
Channel type
Nr of transistors
1 (16)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Nr of transistors
VDS [max] (V)
80
80
80
100
100
100
80
100
80
80
80
80
100
100
100
100
VDS [max] (V)
RDSon [max] @ VGS = 10 V (mΩ)
1.11
1.18
0.9
1.3
1.35
1.42
1.3
1.36
0.95
1.16
0.9
0.85
1.04
1.04
0.99
1.09
RDSon [max] @ VGS = 10 V (mΩ)
Tj [max] (°C)
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
Tj [max] (°C)
ID [max] (A)
385
375
505
355
355
340
375
340
495
385
495
505
460
430
460
430
ID [max] (A)
QGD [typ] (nC)
37.3
27.3
42
46
46
36.5
27.3
36.5
42.5
37
42.5
42
69.5
48.2
69.5
48.2
QGD [typ] (nC)
QG(tot) [typ] @ VGS = 10 V (nC)
242
233
309
255
255
244
233
244
336
242
336
309
359
339
359
339
QG(tot) [typ] @ VGS = 10 V (nC)
Ptot [max] (W)
935
935
1550
935
935
935
935
935
1550
935
1550
1550
1550
1550
1550
1550
Ptot [max] (W)
Qr [typ] (nC)
68
76.5
94
74
74
84
76.5
84
101
68
101
94
99
110
99
110
Qr [typ] (nC)
VGSth [typ] (V)
3.1
2.8
3
3.08
3.1
2.8
2.8
2.64
2.8
3
2.8
3
3
2.6
3
2.8
VGSth [typ] (V)
Automotive qualified
N (16)
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
Automotive qualified
Ciss [typ] (pF)
17591
18705
22939
18168
18168
18588
18705
18588
26287
17591
26287
22939
24017
26043
24017
26043
Ciss [typ] (pF)
Coss [typ] (pF)
4261
4363
6142
4157
4157
4089
4363
4089
6139
4261
6139
6142
5556
5635
5556
5635
Coss [typ] (pF)
Release date
2024-02-07 (4)
2024-05-01 (2)
2024-05-06 (10)
2024-05-06
2024-05-06
2024-05-06
2024-05-06
2024-05-06
2024-05-06
2024-05-06
2024-05-06
2024-05-06
2024-05-06
2024-05-01
2024-05-01
2024-02-07
2024-02-07
2024-02-07
2024-02-07
Release date

Products

MOSFETs

型號(hào) 描述 狀態(tài) 快速訪問
PSMN1R0-100CSF NextPower 100 V, 1.04 mOhm, N-channel MOSFET in CCPAK1212i package Production
PSMN1R4-100CSE N-channel, 100 V, 1.42 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Production
PSMN1R0-100ASE N-channel, 100 V, 1.04 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMN1R1-100CSE N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Production
PSMN1R4-100ASE N-channel, 100 V, 1.36 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMN1R2-80ASE N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMN1R0-80CSE N-channel, 80 V, 0.95 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Production
PSMNR90-80ASE N-channel, 80 V, 0.9 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMN1R0-100ASF NextPower 100 V, 0.99 mOhm, N-channel MOSFET in CCPAK1212 package Production
PSMN1R2-80CSE N-channel, 80 V, 1.3 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Production
PSMNR90-80CSF NextPower 80 V, 0.9 mOhm, N-channel MOSFET in CCPAK1212i package Production
PSMNR90-80ASF NextPower 80 V, 0.85 mOhm, N-channel MOSFET in CCPAK1212 package Production
PSMN1R3-100ASF NextPower 100 V, 1.3 mOhm, N-channel MOSFET in CCPAK1212 package Production
PSMN1R4-100CSF NextPower 100 V, 1.35 mOhm, N-channel MOSFET in CCPAK1212i package Production
PSMN1R1-80CSF NextPower 80 V, 1.16 mOhm, N-channel MOSFET in CCPAK1212i package Production
PSMN1R1-80ASF NextPower 80 V, 1.11 mOhm, N-channel MOSFET in CCPAK1212 package Production

Documentation

文件名稱 標(biāo)題 類型 日期
AN11243.pdf Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11156.pdf Using Power MOSFET Zth Curves Application note 2021-01-04
AN11261.pdf RC Thermal Models Application note 2021-03-18
AN50005.pdf Paralleling power MOSFETs in high power applications Application note 2021-09-13
AN50014.pdf Understanding the MOSFET peak drain current rating Application note 2022-03-28
AN50006.pdf Power MOSFETs in linear mode Application note 2022-04-12
AN90001.pdf Designing in MOSFETs for safe and reliable gate-drive operation Application note 2024-10-28
RS6121_CCPAK1212i_MOSFETs.png - Marcom graphics 2024-11-15
nexperia_document_CCPAK_MOSFETs_2024.pdf Nexperia CCPAK MOSFETs Leaflet 2024-11-19
nexperia_document_CCPAK-MOSFETs_2024_Chinese.pdf CCPAK MOSFET LEAFLET CN Leaflet 2024-12-02
AN11158.pdf Understanding power MOSFET data sheet parameters Application note 2025-02-18

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