4 kW analogue bridgeless totem-pole PFC evaluation board
For this evaluation board, the PFC circuit has been implemented on a 4-layer PCB, with 2 oz copper for the outer layers and 1.5 oz copper for the inner layers. GAN039-650NTB devices by Nexperia are used for both the fast and slow switching legs. The inductor is made of a High Flux core with the inductance of 480 μH and a DC resistance of 0.025 Ω, designed to operate at 65 kHz. A simple 4 A rated high/low side driver IC (Si8273) with 0 V and 12 V as the on/off voltage levels directly drives each GaN FET. The control function is handled by a TI UCC28180 PFC controller.
4 kW analogue bridgeless totem-pole PFC evaluation board
Key features & benefits
By using a diode-free power GaN FET bridge with low reverse-recovery charge, very-high-efficiency single-phase AC-DC conversion is realized. In this circuit, the performance and efficiency improvement, is achieved by use of the GaN FETs in the fast-switching leg of the circuit. GaN FETs with low Qrr provide low loss hardswitching performance in this application.
Key applications
- Energy Storage Systems
- Servo Drives
- Server/Telecom PSU
- Welding Inverters
板上的產品 (1)
| Type number | Description | Status | Quick access | |
|---|---|---|---|---|
|
GAN039-650NTB | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package | Production |
相關板塊 (5)
| Board | Description | Type | Quick links | Shop link | |
|---|---|---|---|---|---|
|
NX-HB-GAN039-TSCUL-top-side-cooled-half-bridge-evaluation-board | 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package | Evaluation board | ||
|
NX-HB-GAN041UL-GAN041-650WSB-half-bridge-evaluation-board | Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW) | Evaluation board | ||
|
NX-DP-GAN039-TSC-Double-pulse-evaluation-board | Double pulse evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package | Evaluation board | ||
|
NX-HB-GAN039-BSCUL-bottom-side-cooled-half-bridge-evaluation-board | 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package | Evaluation board | ||
|
nx-hb-gan111ul-half-bridge-evaluation-board | NX-HB-GAN111UL half-bridge evaluation board | Evaluation board |
Latest videos
板上的產品 (1)
| Type number | Description | Status | Quick access | |
|---|---|---|---|---|
|
|
GAN039-650NTB | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package | Production |
相關板塊 (5)
| Board | Description | Type | Quick links | Shop link | |
|---|---|---|---|---|---|
|
|
NX-HB-GAN039-TSCUL-top-side-cooled-half-bridge-evaluation-board | 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package | Evaluation board | ||
|
|
NX-HB-GAN041UL-GAN041-650WSB-half-bridge-evaluation-board | Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW) | Evaluation board | ||
|
|
NX-DP-GAN039-TSC-Double-pulse-evaluation-board | Double pulse evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package | Evaluation board | ||
|
|
NX-HB-GAN039-BSCUL-bottom-side-cooled-half-bridge-evaluation-board | 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package | Evaluation board | ||
|
|
nx-hb-gan111ul-half-bridge-evaluation-board | NX-HB-GAN111UL half-bridge evaluation board | Evaluation board |
文檔 (2)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| GaNFET_evaluation_board_Terms_Of_Use | GaN FET EVALUATION BOARD TERMS OF USE | Other type | 2023-10-10 |
| UM90024 | 4 kW analogue bridgeless totem-pole PFC evaluation board | User manual | 2023-11-21 |