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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74ALVC16245DL

16-bit transceiver with direction pin; 3-state

The 74ALVC16245; 74ALVCH16245 is a 16-bit transceiver with 3-state outputs. The device can be used as two 8-bit transceivers or one 16-bit transceiver. The device features two output enables (1OE and 2OE) each controlling eight outputs, and two send/receive (1DIR and 2DIR) inputs for direction control. A HIGH on nOE causes the outputs to assume a high-impedance OFF-state.

Schmitt trigger action on all inputs makes the device tolerant of slow rise and fall times.

This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

The 74ALVCH16245 has active bus hold circuitry which is provided to hold unused or floating data inputs at a valid logic level. This feature eliminates the need for external pull-up or pull-down resistors.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 1.2 V to 3.6 V

  • CMOS low power consumption

  • MULTIBYTE? flow-through standard pin-out architecture

  • Low inductance multiple VCC and GND pins for minimum noise and ground bounce

  • Overvoltage tolerant inputs to 5.5 V(74ALVC16245 only)

  • Direct interface with TTL levels

  • IOFF circuitry provides partial Power-down mode operation

  • Bushold on all data inputs(74ALVCH16245 only)

  • Output drive capability 50 Ω transmission lines at 85 °C

  • Current drive ±24 mA at 3.0 V

  • Latch-up performance exceeds 2500 mA per JESD 78 Class II.A

  • Complies with JEDEC standards:

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8C/JESD36 (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
  • Specified from -40 °C to +85 °C

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào),(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74ALVC16245DL 74ALVC16245DL,112
(935187800112)
Obsolete no package information
74ALVC16245DL,118
(935187800118)
Obsolete

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
74ALVC16245DL 74ALVC16245DL,112 74ALVC16245DL rohs rhf rhf
74ALVC16245DL 74ALVC16245DL,118 74ALVC16245DL rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (2)

文件名稱 標(biāo)題 類型 日期
74ALVC_ALVCH16245 16-bit transceiver with direction pin; 3-state Data sheet 2024-06-26
alvc16245 alvc16245 IBIS model IBIS model 2013-04-08

支持

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模型

文件名稱 標(biāo)題 類型 日期
alvc16245 alvc16245 IBIS model IBIS model 2013-04-08

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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