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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74ALVT162821DL

20-bit bus interface D-type flip-flop; positive?-?edge trigger with 30 Ohm termination resistors; 3?-?state

The 74ALVT162821 is a 20??-??bit positive?-?edge triggered D?-?type flip?-?flop with 30 ? termination resistors and 3?-?state outputs

The device can be used as two 10?-?bit flip?-?flops or one 20?-?bit flip?-?flop. The device features two clocks (1CP and 2CP) and two output enables (1OE and 2OE), each controlling 10?-?bits. The flip?-?flops will store the state of their individual D?-?inputs that meet the set?-?up and hold time requirements on the LOW?-?to?-?HIGH clock (nCP) transition. A HIGH on nOE causes the outputs to assume a high?-?impedance OFF?-?state. Operation of the nOE input does not affect the state of the flip?-?flops. Bus hold data inputs eliminate the need for external pull?-?up resistors to define unused inputs

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 2.3 V to 3.6 V

  • Overvoltage tolerant inputs to 5.5 V

  • BiCMOS high speed and output drive

  • Outputs include series resistance of 30 ? making external termination resistors unnecessary

  • No bus current loading when output is tied to 5 V bus

  • Direct interface with TTL levels

  • IOFF circuitry provides partial Power-down mode operation

  • 20-bit positive-edge triggered register

  • 5 V I/O compatible

  • Multiple VCC and GND pins minimize switching noise

  • Bus hold on data inputs

  • Live insertion and extraction permitted

  • Power-up reset

  • Power-up 3-state

  • Output capability: +12 mA and -12 mA

  • Latch-up protection:

    • JESD17: exceeds 500 mA

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to 85 °C

參數(shù)類型

型號(hào) Package name
74ALVT162821DL SSOP56

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào),(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74ALVT162821DL 74ALVT162821DL,112
(935255450112)
Obsolete ALVT162821 SOT371-1
SSOP56
(SOT371-1)
SOT371-1 SSOP-TSSOP-VSO-REFLOW
SSOP-TSSOP-VSO-WAVE
暫無信息
74ALVT162821DL,118
(935255450118)
Obsolete ALVT162821 暫無信息
74ALVT162821DL,512
(935255450512)
Obsolete ALVT162821 暫無信息
74ALVT162821DL,518
(935255450518)
Obsolete ALVT162821 暫無信息

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
74ALVT162821DL 74ALVT162821DL,112 74ALVT162821DL rhf
74ALVT162821DL 74ALVT162821DL,118 74ALVT162821DL rhf
74ALVT162821DL 74ALVT162821DL,512 74ALVT162821DL rohs rhf rhf
74ALVT162821DL 74ALVT162821DL,518 74ALVT162821DL rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (7)

文件名稱 標(biāo)題 類型 日期
74ALVT162821 20-bit bus interface D-type flip-flop; positive?-?edge trigger with 30?? termination resistors; 3?-?state Data sheet 2024-06-25
alvt162821 alvt162821 IBIS model IBIS model 2013-04-08
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT371-1 plastic, shrink small outline package; 56 leads; 0.635 mm pitch; 18.45 mm x 7.5 mm x 2.8 mm body Package information 2020-04-21
SSOP-TSSOP-VSO-REFLOW Footprint for reflow soldering Reflow soldering 2009-10-08
alvt16 alvt16 Spice model SPICE model 2013-05-07
SSOP-TSSOP-VSO-WAVE Footprint for wave soldering Wave soldering 2009-10-08

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
alvt162821 alvt162821 IBIS model IBIS model 2013-04-08
alvt16 alvt16 Spice model SPICE model 2013-05-07

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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