可訂購部件
型號(hào) | 可訂購的器件編號(hào) | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
---|---|---|---|---|
74AVC1T45GW-Q100 | 74AVC1T45GW-Q100H | 935299491125 | SOT363-2 | 訂單產(chǎn)品 |
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Click here for more informationDual-supply voltage level translator/transceiver; 3-state
The 74AVC1T45-Q100 is a single bit, dual supply transceiver with 3-state output that enables bidirectional level translation. It features two 1-bit input-output ports (A and B), a direction control input (DIR) and dual supply pins (VCC(A) and VCC(B)). Both VCC(A) and VCC(B) can be supplied at any voltage between 0.8 V and 3.6 V making the device suitable for translating between any of the low voltage nodes (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V). Pins A and DIR are referenced to VCC(A) and pin B is referenced to VCC(B). A HIGH on DIR allows transmission from A to B and a LOW on DIR allows transmission from B to A.
The device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing any damaging backflow current through the device when it is powered down. In suspend mode when either VCC(A) or VCC(B) are at GND level, both A and B are in the high-impedance OFF-state.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply voltage range:
VCC(A): 0.8 V to 3.6 V
VCC(B): 0.8 V to 3.6 V
High noise immunity
CMOS low power dissipation
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11( 0.9 V to 1.65 V)
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8C (2.7 V to 3.6 V)
Maximum data rates:
500 Mbit/s (1.8 V to 3.3 V translation)
320 Mbit/s (< 1.8 V to 3.3 V translation)
320 Mbit/s (translate to 2.5 V or 1.8 V)
280 Mbit/s (translate to 1.5 V)
240 Mbit/s (translate to 1.2 V)
Suspend mode
Latch-up performance exceeds 100 mA per JESD 78 Class II
Overvoltage tolerant inputs to 3.6 V
Dynamically controlled outputs
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial Power-down mode operation
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3B exceeds 8000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
型號(hào) | VCC(A) (V) | VCC(B) (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Nr of bits | Power dissipation considerations | Tamb (°C) | Package name |
---|---|---|---|---|---|---|---|---|---|
74AVC1T45GW-Q100 | 0.8?-?3.6 | 0.8?-?3.6 | CMOS/LVTTL | ± 12 | 2.1 | 1 | very low | -40~125 | TSSOP6 |
Model Name | 描述 |
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型號(hào) | 可訂購的器件編號(hào),(訂購碼(12NC)) | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
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74AVC1T45GW-Q100 | 74AVC1T45GW-Q100H (935299491125) |
Active | B5 |
TSSOP6 (SOT363-2) |
SOT363-2 | SOT363-2_125 |
型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
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74AVC1T45GW-Q100 | 74AVC1T45GW-Q100H | 74AVC1T45GW-Q100 |
文件名稱 | 標(biāo)題 | 類型 | 日期 |
---|---|---|---|
74AVC1T45_Q100 | Dual-supply voltage level translator/transceiver; 3-state | Data sheet | 2024-07-02 |
AN10161 | PicoGate Logic footprints | Application note | 2002-10-29 |
AN90007 | Pin FMEA for AVC family | Application note | 2018-11-30 |
SOT363-2 | 3D model for products with SOT363-2 package | Design support | 2023-02-02 |
avc1t45 | 74AVC1T45 IBIS model | IBIS model | 2016-02-24 |
SOT363-2 | plastic thin shrink small outline package; 6 leads; body width 1.25 mm | Package information | 2022-11-21 |
SOT363-2_125 | TSSOP6 ; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2022-11-04 |
74AVC1T45GW-Q100_Nexperia_Product_Reliability | 74AVC1T45GW-Q100 Nexperia Product Reliability | Quality document | 2024-06-16 |
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Model Name | 描述 |
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型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
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74AVC1T45GW-Q100 | 74AVC1T45GW-Q100H | 935299491125 | Active | SOT363-2_125 | 3,000 | 訂單產(chǎn)品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.