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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74HC191PW

Presettable synchronous 4-bit binary up/down counter

The 74HC191 is an asynchronously presettable 4-bit binary up/down counter. It contains four master/slave flip-flops with internal gating and steering logic to provide asynchronous preset and synchronous count-up and count-down operation. Asynchronous parallel load capability permits the counter to be preset to any desired value. Information present on the parallel data inputs (D0 to D3) is loaded into the counter and appears on the outputs when the parallel load (PL) input is LOW. This operation overrides the counting function. Counting is inhibited by a HIGH level on the count enable (CE) input. When CE is LOW internal state changes are initiated synchronously by the LOW-to-HIGH transition of the clock input. The up/down (U/D) input signal determines the direction of counting as indicated in the function table. The CE input may go LOW when the clock is in either state, however, the LOW-to-HIGH CE transition must occur only when the clock is HIGH. Also, the U/D input should be changed only when either CE or CP is HIGH. Overflow/underflow indications are provided by two types of outputs, the terminal count (TC) and ripple clock (RC). The TC output is normally LOW and goes HIGH when a circuit reaches zero in the count-down mode or reaches '15' in the count-up-mode. The TC output will remain HIGH until a state change occurs, either by counting or presetting, or until U/D is changed. Do not use the TC output as a clock signal because it is subject to decoding spikes. The TC signal is used internally to enable the RC output. When TC is HIGH and CE is LOW, the RC output follows the clock pulse (CP). This feature simplifies the design of multistage counters as shown in Figure 1 and Figure 2. In Figure 1, each RC output is used as the clock input to the next higher stage. It is only necessary to inhibit the first stage to prevent counting in all stages, since a HIGH on CE inhibits the RC output pulse. The timing skew between state changes in the first and last stages is represented by the cumulative delay of the clock as it ripples through the preceding stages. This can be a disadvantage of this configuration in some applications. Figure 2 shows a method of causing state changes to occur simultaneously in all stages. The RC outputs propagate the carry/borrow signals in ripple fashion and all clock inputs are driven in parallel. In this configuration the duration of the clock LOW state must be long enough to allow the negative-going edge of the carry/borrow signal to ripple through to the last stage before the clock goes HIGH. Since the RC output of any package goes HIGH shortly after its CP input goes HIGH there is no such restriction on the HIGH-state duration of the clock. In Figure 3, the configuration shown avoids ripple delays and their associated restrictions. Combining the TC signals from all the preceding stages forms the CE input for a given stage. An enable must be included in each carry gate in order to inhibit counting. The TC output of a given stage it not affected by its own CE signal therefore the simple inhibit scheme of Figure 1 and Figure 2 does not apply. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.

Features and benefits

  • Wide supply voltage range from 2.0 to 6.0 V

  • CMOS low power dissipation

  • High noise immunity

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • CMOS input levels

  • Synchronous reversible counting

  • Asynchronous parallel load

  • Count enable control for synchronous expansion

  • Single up/down control input

  • Complies with JEDEC standards:

    • JESD8C (2.7 V to 3.6 V)

    • JESD7A (2.0 V to 6.0 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

參數(shù)類型

型號(hào) VCC (V) Output drive capability (mA) Logic switching levels tpd (ns) Power dissipation considerations Tamb (°C) Package name
74HC191PW 2.0?-?6.0 ± 5.2 CMOS 22 low -40~125 TSSOP16

封裝

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74HC191PW 74HC191PW,118
(935188370118)
Active HC191 SOT403-1
TSSOP16
(SOT403-1)
SOT403-1 SSOP-TSSOP-VSO-WAVE
SOT403-1_118

環(huán)境信息

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
74HC191PW 74HC191PW,118 74HC191PW rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (10)

文件名稱 標(biāo)題 類型 日期
74HC191 Presettable synchronous 4-bit binary up/down counter Data sheet 2024-03-14
AN11044 Pin FMEA 74HC/74HCT family Application note 2019-01-09
SOT403-1 3D model for products with SOT403-1 package Design support 2020-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
TSSOP16_SOT403-1_mk plastic, thin shrink small outline package; 16 leads; 0.65 mm pitch; 5 mm x 4.4 mm x 1.1 mm body Marcom graphics 2017-01-28
SOT403-1 plastic, thin shrink small outline package; 16 leads; 5 mm x 4.4 mm x 1.2 mm body Package information 2023-11-08
SOT403-1_118 TSSOP16; Reel pack for SMD, 13"; Q1/T1 product orientation Packing information 2020-04-21
74HC191PW_Nexperia_Product_Reliability 74HC191PW Nexperia Product Reliability Quality document 2024-06-16
HCT_USER_GUIDE HC/T User Guide User manual 1997-10-31
SSOP-TSSOP-VSO-WAVE Footprint for wave soldering Wave soldering 2009-10-08

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
SOT403-1 3D model for products with SOT403-1 package Design support 2020-01-22

訂購(gòu)、定價(jià)與供貨

型號(hào) Orderable part number Ordering code (12NC) 狀態(tài) 包裝 Packing Quantity 在線購(gòu)買
74HC191PW 74HC191PW,118 935188370118 Active SOT403-1_118 2,500 訂單產(chǎn)品

樣品

作為 Nexperia 的客戶,您可以通過我們的銷售機(jī)構(gòu)訂購(gòu)樣品。

如果您沒有 Nexperia 的直接賬戶,我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可訂購(gòu)部件

型號(hào) 可訂購(gòu)的器件編號(hào) 訂購(gòu)代碼(12NC) 封裝 從經(jīng)銷商處購(gòu)買
74HC191PW 74HC191PW,118 935188370118 SOT403-1 訂單產(chǎn)品
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