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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74LV595DB

8-bit serial-in/serial-out or parallel-out shift register; 3-state

The 74LV595 is an 8?-?bit serial?-?in/serial or parallel?-?out shift register with a storage register and 3?-?state outputs. Both the shift and storage register have separate clocks. The device features a serial input (DS) and a serial output (Q7S) to enable cascading and an asynchronous reset MR input. A LOW on MR will reset the shift register. Data is shifted on the LOW?-?to?-?HIGH transitions of the SHCP input. The data in the shift register is transferred to the storage register on a LOW?-?to?-?HIGH transition of the STCP input. If both clocks are connected together, the shift register will always be one clock pulse ahead of the storage register. Data in the storage register appears at the output whenever the output enable input (OE) is LOW. A HIGH on OE causes the outputs to assume a high?-?impedance OFF?-?state. Operation of the OE input does not affect the state of the registers. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess VCC.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 1.0 V to 3.6 V

  • CMOS low power dissipation

  • Direct interface with TTL levels

  • Typical output ground bounce < 0.8 V at VCC = 3.3 V and Tamb = 25 °C

  • Typical HIGH-level output voltage (VOH) undershoot: > 2 V at VCC = 3.3 V and Tamb = 25 °C

  • Has a shift register with direct clear

  • Output capability:

    • Parallel outputs; bus driver

    • Serial output; standard

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Complies with JEDEC standards

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8C (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to 85 °C and -40 °C to 125 °C

Applications

  • Serial-to-parallel data conversion

  • Remote control holding register

參數(shù)類型

型號 Package name
74LV595DB SSOP16

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74LV595DB 74LV595DB,112
(935198280112)		 Obsolete LV595 SOT338-1
SSOP16
(SOT338-1) 		SOT338-1 SSOP-TSSOP-VSO-REFLOW
SSOP-TSSOP-VSO-WAVE
暫無信息
74LV595DB,118
(935198280118)		 Obsolete LV595 暫無信息

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
74LV595DB 74LV595DB,112 74LV595DB rohs rhf rhf
74LV595DB 74LV595DB,118 74LV595DB rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (8)

文件名稱 標(biāo)題 類型 日期
74LV595 8-bit serial-in/serial-out or parallel-out shift register; 3-state Data sheet 2024-04-08
lv595 74LV595 IBIS model IBIS model 2019-02-04
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SSOP16_SOT338-1_mk plastic, shrink small outline package; 16 leads; 0.65 mm pitch; 6.2 mm x 5.3 mm x 2 mm body Marcom graphics 2017-01-28
SOT338-1 plastic, shrink small outline package; 16 leads; 0.65 mm pitch; 6.2 mm x 5.3 mm x 2 mm body Package information 2022-06-20
SSOP-TSSOP-VSO-REFLOW Footprint for reflow soldering Reflow soldering 2009-10-08
lv lv Spice model SPICE model 2013-05-07
SSOP-TSSOP-VSO-WAVE Footprint for wave soldering Wave soldering 2009-10-08

支持

如果您需要設(shè)計/技術(shù)支持，請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
lv595 74LV595 IBIS model IBIS model 2019-02-04
lv lv Spice model SPICE model 2013-05-07

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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