可訂購部件
型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
---|---|---|---|---|
74LVC1G79GS | 74LVC1G79GS,132 | 935292919132 | SOT1202 | 訂單產(chǎn)品 |
進一步了解Nexperia的豐富產(chǎn)品組合,比如二極管、雙極性晶體管、ESD保護器件、MOSFET器件、氮化鎵場效應晶體管(GaN FET)、絕緣柵雙極晶體管(IGBT)以及模擬IC和邏輯IC。我們的器件廣泛應用于汽車、工業(yè)、移動和消費等多個領(lǐng)域,幾乎為世界上所有電子設(shè)計提供支持。
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationSingle D-type flip-flop; positive-edge trigger
The 74LVC1G79 is a single positive-edge triggered D-type flip-flop. Data at the D-input that meets the set-up and hold time requirements on the LOW-to-HIGH clock transition will be stored in the flip-flop and appear at the Q output. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments.
Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.
This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.
Wide supply voltage range from 1.65 V to 5.5 V
Overvoltage tolerant inputs to 5.5 V
High noise immunity
CMOS low power dissipation
±24 mA output drive (VCC = 3.0 V)
Direct interface with TTL levels
Latch-up performance exceeds 250 mA
IOFF circuitry provides partial Power-down mode operation
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8C (2.7 V to 3.6 V)
JESD36 (4.5 V to 5.5 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C.
型號 | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Power dissipation considerations | Tamb (°C) | Package name |
---|---|---|---|---|---|---|---|---|
74LVC1G79GS | 1.65?-?5.5 | CMOS/LVTTL | ± 32 | 2.2 | 450 | low | -40~125 | XSON6 |
Model Name | 描述 |
---|---|
|
型號 | 可訂購的器件編號,(訂購碼(12NC)) | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
74LVC1G79GS | 74LVC1G79GS,132 (935292919132) |
Active | VP |
XSON6 (SOT1202) |
SOT1202 |
REFLOW_BG-BD-1
|
SOT1202_132 |
文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
74LVC1G79 | Single D-type flip-flop; positive-edge trigger | Data sheet | 2023-08-18 |
AN11009 | Pin FMEA for LVC family | Application note | 2019-01-09 |
Nexperia_document_guide_MiniLogic_MicroPak_201808 | MicroPak leadless logic portfolio guide | Brochure | 2018-09-03 |
SOT1202 | 3D model for products with SOT1202 package | Design support | 2023-02-02 |
lvc1g79 | 74LVC1G79 IBIS model | IBIS model | 2014-10-20 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT1202 | plastic, leadless extremely thin small outline package; 6 terminals; 0.35 mm pitch; 1 mm x 1mm x 0.35 mm body | Package information | 2022-06-01 |
SOT1202_132 | XSON6; Reel pack for SMD, 7''; Q3/T4 product orientation | Packing information | 2020-04-21 |
74LVC1G79GS_Nexperia_Product_Reliability | 74LVC1G79GS Nexperia Product Reliability | Quality document | 2024-06-16 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
lvc | lvc Spice model | SPICE model | 2013-05-07 |
MAR_SOT1202 | MAR_SOT1202 Topmark | Top marking | 2013-06-03 |
型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
---|---|---|---|---|---|---|
74LVC1G79GS | 74LVC1G79GS,132 | 935292919132 | Active | SOT1202_132 | 5,000 | 訂單產(chǎn)品 |
作為 Nexperia 的客戶,您可以通過我們的銷售機構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶,我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.