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Click here for more information74LVC2G17GF
Dual non-inverting Schmitt trigger with 5 V tolerant input
The 74LVC2G17 is a dual buffer with Schmitt-trigger inputs. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments.
This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.
Alternatives
Features and benefits
Wide supply voltage range from 1.65 V to 5.5 V
Overvoltage tolerant inputs to 5.5 V
High noise immunity
±24 mA output drive (VCC = 3.0 V)
CMOS low-power consumption
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
IOFF circuitry provides partial Power-down mode operation
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD-8B/JESD36 (2.7 V to 3.6 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
Applications
Wave and pulse shapers for highly noisy environments
PCB Symbol, Footprint and 3D Model
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封裝
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74LVC2G17GF | 74LVC2G17GF,132 (935282434132) |
Obsolete | no package information | ||||
環(huán)境信息
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號 | 化學成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74LVC2G17GF | 74LVC2G17GF,132 | 74LVC2G17GF |
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Series
支持
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模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| lvc2g17 | 74LVC2G17 IBIS model | IBIS model | 2014-10-20 |
PCB Symbol, Footprint and 3D Model
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.