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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74LVC3G07GM

Triple buffer with open-drain output

The 74LVC3G07 provides three non-inverting buffers.

The output of the device is an open-drain and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions.

Input can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device in a mixed 3.3 V and 5 V environment.

Schmitt trigger action at all inputs makes the circuit tolerant for slower input rise and fall time.

This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 1.65 V to 5.5 V

  • 5 V tolerant input/output for interfacing with 5 V logic

  • High noise immunity

  • Complies with JEDEC standard:

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8-B/JESD36 (2.7 V to 3.6 V).

  • -24 mA output drive (VCC = 3.0 V)

  • CMOS low power consumption

  • Latch-up performance exceeds 250 mA

  • Direct interface with TTL levels

  • Inputs accept voltages up to 5 V

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C.

參數(shù)類型

型號(hào) Package name
74LVC3G07GM XQFN8

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74LVC3G07GM 74LVC3G07GM,115
(935277246115)
Obsolete V07 SOT902-2
XQFN8
(SOT902-2)
SOT902-2 暫無(wú)信息
74LVC3G07GM,125
(935277246125)
Obsolete V07 SOT902-2_125

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
74LVC3G07GM 74LVC3G07GM,115 74LVC3G07GM rohs rhf rhf
74LVC3G07GM 74LVC3G07GM,125 74LVC3G07GM rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (8)

文件名稱 標(biāo)題 類型 日期
74LVC3G07 Triple buffer with open-drain output Data sheet 2023-08-24
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11009 Pin FMEA for LVC family Application note 2019-01-09
Nexperia_document_guide_MiniLogic_MicroPak_201808 MicroPak leadless logic portfolio guide Brochure 2018-09-03
lvc3g07 74LVC3G07 IBIS model IBIS model 2015-01-15
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
XQFN8_SOT902-2_mk plastic, extremely thin quad flat package; 8 terminals; 0.55 mm pitch; 1.6 mm x 1.6 mm x 0.5 mm body Marcom graphics 2017-01-28
SOT902-2 plastic, leadless extremely thin quad flat package; 8 terminals; 0.5 mm pitch; 1.6 mm x 1.6 mm x 0.5 mm body Package information 2020-04-21

支持

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模型

文件名稱 標(biāo)題 類型 日期
lvc3g07 74LVC3G07 IBIS model IBIS model 2015-01-15

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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