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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74LVTN16244BBX

3.3 V 16-bit buffer/driver; 3-state

The 74LVTN16244B is a high-performance BiCMOS product designed for VCC operation at 3.3 V.

This device is a 16-bit buffer and line driver featuring non-inverting 3-state bus outputs. The device can be used as four 4-bit buffers, two 8-bit buffers, or one 16-bit buffer.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • 16-bit bus interface

  • 3-state buffers

  • Output capability: +64 mA and -32 mA

  • TTL input and output switching levels

  • Input and output interface capability to systems at 5 V supply

  • Power-up 3-state

  • Live insertion and extraction permitted

  • No bus current loading when output is tied to 5 V bus

  • Latch-up protection

    • JESD78B Class II exceeds 500 mA

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C

參數(shù)類型

型號(hào) Package name
74LVTN16244BBX HXQFN60U

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74LVTN16244BBX 74LVTN16244BBX,518
(935295882518)
Obsolete LVTN16244B Standard Procedure Standard Procedure no package information

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
74LVTN16244BBX 74LVTN16244BBX,518 74LVTN16244BBX rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (2)

文件名稱 標(biāo)題 類型 日期
74LVTN16244B 3.3 V 16-bit buffer/driver; 3-state Data sheet 2024-07-08
lvtn16244b 74LVTN16244B IBIS Model IBIS model 2014-08-12

支持

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模型

文件名稱 標(biāo)題 類型 日期
lvtn16244b 74LVTN16244B IBIS Model IBIS model 2014-08-12

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.