可訂購部件
型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
---|---|---|---|---|
AXP1T34GX | AXP1T34GXH | 935691573125 | SOT1226-3 | 訂單產(chǎn)品 |
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Click here for more informationDual supply translating buffer
The AXP1T34 is a single bit, dual supply translating buffer. It features one input (A), an output (Y) and dual supply pins (VCCI and VCCO). Both VCCI and VCCO can be supplied at any voltage between 0.9 V and 5.5 V making the device suitable for translating between any voltage nodes specified (1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V and 5.0 V). No power supply sequencing is required and output glitches during power supply transitions are prevented using patented circuitry. As a result, glitches will not appear on the outputs for supply transitions during power-up/down between 20 mV?/?μs and 5.5 V/s
The input is referenced to VCCI and the output is referenced to VCCO. Schmitt-trigger action at the input makes the circuit tolerant of slower input rise and fall times.
This device ensures low static and dynamic power consumption across the entire supply range and is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. In suspend mode when either VCCI or VCCO are at GND level the output is in the high-impedance OFF-state
Wide supply voltage range:
VCCI: 0.9 V to 5.5 V
VCCO: 0.9 V to 5.5 V
Low input capacitance; CI = 1.5 pF (typical)
Low output capacitance; CO = 3.8 pF (typical)
Low dynamic power consumption; CPD = 0.4 pF at VCCI = 1.2 V (typical)
Low dynamic power consumption; CPD = 11 pF at VCCO = 5 V (typical)
Low static power consumption; ICCI = 0.1 μA (25 °C maximum)
Low static power consumption; ICCO = 1.0 μA (25 °C maximum)
High noise immunity
Complies with JEDEC standard:
JESD8-12 (1.1 V to 1.3 V; A input)
JESD8-11 (1.4 V to 1.6 V)
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8C (2.7 V to 3.6 V)
JESD12-6 (4.5 V to 5.5 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Latch-up performance exceeds 100 mA per JESD78D Class II
Inputs accept voltages up to 5.5 V
Low noise overshoot and undershoot < 10% of VCCO
IOFF circuitry provides partial power-down mode operation
Multiple package options
Specified from ?40 °C to +125 °C
型號 | VCC(A) (V) | VCC(B) (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Nr of bits | Power dissipation considerations | Tamb (°C) | Package name | Category |
---|---|---|---|---|---|---|---|---|---|---|
AXP1T34GX | 0.9?-?5.5 | 0.9?-?5.5 | CMOS | ± 12 | 9 | 1 | ultra low | -40~125 | X2SON5 | Uni-directional |
型號 | 可訂購的器件編號,(訂購碼(12NC)) | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
AXP1T34GX | AXP1T34GXH (935691573125) |
Active | r3 |
X2SON5 (SOT1226-3) |
SOT1226-3 | SOT1226-3_125 |
文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
AXP1T34 | Dual supply translating buffer | Data sheet | 2023-12-01 |
SOT1226-3 | 3D model for products with SOT1226-3 package | Design support | 2021-01-28 |
SOT1226-3 | plastic thermal enhanced extremely thin small outline package; no leads;5 terminals; body 0.8 x 0.8 x 0.32 mm | Package information | 2020-08-27 |
SOT1226-3_125 | X2SON5; Reel pack for SMD, 7''; Q3/T4 product orientation | Packing information | 2020-05-08 |
AXP1T34GX_Nexperia_Product_Reliability | AXP1T34GX Nexperia Product Reliability | Quality document | 2024-06-16 |
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文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
SOT1226-3 | 3D model for products with SOT1226-3 package | Design support | 2021-01-28 |
型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
---|---|---|---|---|---|---|
AXP1T34GX | AXP1T34GXH | 935691573125 | Active | SOT1226-3_125 | 10,000 | 訂單產(chǎn)品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.