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Click here for more informationBSP304A
P-channel vertical D-MOS intermediate level FET
Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
- Suitable for high frequency applications due to fast switching characteristics
- Suitable for use with all 5 V logic families
Applications
- High-speed line drivers
- Line current interruptors
- Line transformer drivers
- Relay drivers
參數(shù)類型
| 型號 | Package version | Package name | Product status | Release date |
|---|---|---|---|---|
| BSP304A | SOT54 | TO-92 | End of life | 2010-08-03 |
封裝
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| BSP304A | BSP304A,116 (934030880116) |
Obsolete | no package information | ||||
| BSP304A,126 (934030880126) |
Obsolete | ||||||
環(huán)境信息
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號 | 化學成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| BSP304A | BSP304A,116 | BSP304A | ||
| BSP304A | BSP304A,126 | BSP304A |
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文檔 (5)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
支持
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模型
No documents available
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.