可訂購部件
型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
---|---|---|---|---|
BUK9K13-40H | BUK9K13-40HX | 934662505115 | SOT1205 | 訂單產(chǎn)品 |
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Click here for more informationDual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D
Dual, Logic level N-channel MOSFET in an LFPAK56D package, using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications
Fully automotive qualified to AEC-Q101 at 175 °C
Low power losses, high power density
High robustness and reliability
Gull wing leads for high manufacturability and AOI
Repetitive avalanche rated
12 V, 24 V and 48 V automotive systems
Motors, lamps and solenoid control
Transmission control
DC-to-DC conversion
型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BUK9K13-40H | SOT1205 | LFPAK56D; Dual LFPAK | Production | N | 2 | 40 | 13.6 | 16.9 | 175 | 42 | 1.8 | 13 | 46 | 16.2 | 1.85 | Y | 848 | 280 | 2021-02-01 |
型號 | 可訂購的器件編號,(訂購碼(12NC)) | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
BUK9K13-40H | BUK9K13-40HX (934662505115) |
Active | 91340HK |
LFPAK56D; Dual LFPAK (SOT1205) |
SOT1205 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT1205_115 |
文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
BUK9K13-40H | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D | Data sheet | 2021-02-11 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN90003 | LFPAK MOSFET thermal design guide | Application note | 2023-08-22 |
AN90011 | Half-bridge MOSFET switching and its impact on EMC | Application note | 2020-04-28 |
SOT1205 | 3D model for products with SOT1205 package | Design support | 2017-06-30 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
LFPAK56D_SOT1205_mk | plastic, single ended surface mounted package (LFPAK56D); 8 leads; 1.27 mm pitch; 4.7 mm x 5.3 mm x 1.05 mm body | Marcom graphics | 2017-01-28 |
SOT1205 | plastic, single ended surface mounted package (LFPAK56D); 8 leads | Package information | 2022-03-11 |
SOT1205_115 | LFPAK56D; Reel pack for SMD, 7''; Q1/T1 product orientation | Packing information | 2021-01-11 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
BUK9K13-40H | BUK9K13-40H SPICE model | SPICE model | 2021-02-23 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
BUK9K13-40H_Cauer | BUK9K13-40H Cauer thermal model | Thermal model | 2021-02-09 |
BUK9K13-40H_Foster | BUK9K13-40H Foster thermal model | Thermal model | 2021-02-09 |
WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
如果您需要設計/技術支持,請告知我們并填寫 應答表 我們會盡快回復您。
文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
BUK9K13-40H | BUK9K13-40H SPICE model | SPICE model | 2021-02-23 |
BUK9K13-40H_Cauer | BUK9K13-40H Cauer thermal model | Thermal model | 2021-02-09 |
BUK9K13-40H_Foster | BUK9K13-40H Foster thermal model | Thermal model | 2021-02-09 |
SOT1205 | 3D model for products with SOT1205 package | Design support | 2017-06-30 |
型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
---|---|---|---|---|---|---|
BUK9K13-40H | BUK9K13-40HX | 934662505115 | Active | SOT1205_115 | 1,500 | 訂單產(chǎn)品 |
作為 Nexperia 的客戶,您可以通過我們的銷售機構訂購樣品。
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.