可訂購部件
型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
---|---|---|---|---|
LSF0101GW-Q100 | LSF0101GW-Q100H | 935691326125 | SOT363-2 | 訂單產(chǎn)品 |
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Click here for more information1-bit bidirectional multi-voltage level translator; open-drain; push-pull
The LSF0101-Q100 is an 1 channel bidirectional multi-voltage level translator for open-drain and push?-?pull applications. It supports up to 100 MHz up translation and ≥ 100 MHz down translation at ≤ 30 pF capacitive load. There is no need for a direction pin which minimizes system effort. The LSF0101-Q100 supports 5 V tolerant I/O pins for compatibility with TTL levels in a variety of applications. The ability to set up different voltage translation levels on each channel makes the device very flexible and suitable for a lot of different applications.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Bidirectional voltage translation with no direction pin
Up translation
≤ 100 MHz; CL = 30 pF
≤ 50 MHz; CL = 50 pF
Down translation
≥ 100 MHz; CL = 30 pF
≥ 50 MHz; CL = 50 pF
Hot insertion
Bidirectional voltage level translation between:
0.95 V and 1.8 V, 2.5 V, 3.3 V and 5.0 V
1.2 V and 1.8 V, 2.5 V, 3.3 V and 5.0 V
1.8 V and 2.5 V, 3.3 V and 5.0 V
2.5 V and 3.3 V and 5.0 V
3.3 V and 5.0 V
Low standby current
5 V tolerant I/O pins to support TTL
Low RON provides less signal distortion
High-impedance I/O pins for EN = Low.
Flow-through pinout for easy PCB trace routing.
Latch-up performance exceeds 100 mA per JESD78 class II level A
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
GPIO, MDIO, PMBus, SMBus, SDIO, UART, I2C, and other interfaces in Telecom infrastructure
Industrial
Personal computing
型號 | VCC(A) (V) | VCC(B) (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Nr of bits | Power dissipation considerations | Tamb (°C) | Package name |
---|---|---|---|---|---|---|---|---|---|
LSF0101GW-Q100 | 0.95?-?5.0 | 0.95?-?5.0 | CMOS | + 64 | 0.7 | 1 | low | -40~125 | TSSOP6 |
型號 | 可訂購的器件編號,(訂購碼(12NC)) | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
LSF0101GW-Q100 | LSF0101GW-Q100H (935691326125) |
Active | h1 |
TSSOP6 (SOT363-2) |
SOT363-2 | SOT363-2_125 |
型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
---|---|---|---|---|
LSF0101GW-Q100 | LSF0101GW-Q100H | LSF0101GW-Q100 |
文件名稱 | 標(biāo)題 | 類型 | 日期 |
---|---|---|---|
LSF0101_Q100 | 1-bit bidirectional multi-voltage level translator; open-drain; push-pull | Data sheet | 2024-07-25 |
AN90033 | Bidirectional multi-voltage level translator applications using Nexperia's LSF010x auto-sense devices | Application note | 2022-09-02 |
AN90050 | Pin FMEA for LSF family | Application note | 2023-12-14 |
SOT363-2 | 3D model for products with SOT363-2 package | Design support | 2023-02-02 |
SOT363-2 | plastic thin shrink small outline package; 6 leads; body width 1.25 mm | Package information | 2022-11-21 |
SOT363-2_125 | TSSOP6 ; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2022-11-04 |
LSF0101GW-Q100_Nexperia_Product_Reliability | LSF0101GW-Q100 Nexperia Product Reliability | Quality document | 2024-06-16 |
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文件名稱 | 標(biāo)題 | 類型 | 日期 |
---|---|---|---|
SOT363-2 | 3D model for products with SOT363-2 package | Design support | 2023-02-02 |
型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
---|---|---|---|---|---|---|
LSF0101GW-Q100 | LSF0101GW-Q100H | 935691326125 | Active | SOT363-2_125 | 3,000 | 訂單產(chǎn)品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.