可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| NGW40T65M3DFP | NGW40T65M3DFPQ | 934668245127 | SOT429-2 | 訂單產(chǎn)品 |
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Click here for more informationNGW40T65M3DFP
650 V, 40 A trench field-stop IGBT with full rated silicon diode
The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard?-?switching 650 V, 40 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
Features and benefits
Collector current (IC) rated at 40 A
Low conduction and switching losses
Stable and tight parameters for easy parallel operation
Maximum junction temperature of 175 °C
Fully rated as a soft fast reverse recovery diode
5 μs short circuit withstand time
RoHS compliant, lead-free plating
Applications
Motor drives for industrail and consumer appliances
Serve motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufactuing, etc.
Power inverters
Uninterruptible Power Supply (UPS) inverter
Photovoltaic (PV) strings
EV charging
Induction heating
Welding
參數(shù)類型
| 型號 | Product status | VCE [max] (V) | IC [typ] (A) | Configuration | tsc [max] (μs) | Tj [min] (°C) | Tj [max] (°C) | Package version | Package name |
|---|---|---|---|---|---|---|---|---|---|
| NGW40T65M3DFP | Production | 650 | 40 | MS | 5 | -40 | 175 | SOT429-2 | TO-247-3L |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| NGW40T65M3DFP | NGW40T65M3DFPQ (934668245127) |
Active | 40T65M3DFP |
TO-247-3L (SOT429-2) |
SOT429-2 | SOT429-2_127 |
環(huán)境信息
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| NGW40T65M3DFP | NGW40T65M3DFPQ | NGW40T65M3DFP |
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文檔 (5)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| NGW40T65M3DFP | 650 V, 40 A trench field-stop IGBT with full rated silicon diode | Data sheet | 2024-06-28 |
| SOT429_2_3D_view | SOT429_2_3D_view.STEP | Marcom graphics | 2024-11-13 |
| SOT429-2_TO-247-TL | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Marcom graphics | 2023-11-15 |
| SOT429-2 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Package information | 2022-02-10 |
| SOT429-2_127 | TO-247-3L; Tube pack; Standard product orientation | Packing information | 2023-04-03 |
支持
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模型
No documents available
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| NGW40T65M3DFP | NGW40T65M3DFPQ | 934668245127 | Active | SOT429-2_127 | 450 | 訂單產(chǎn)品 |
樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
NGW40T65M3DFP
650 V, 40 A trench field-stop IGBT with full rated silicon diode
從安世半導(dǎo)體購買
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