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Click here for more informationPBSS5130QA
30 V, 1 A PNP low VCEsat (BISS) transistor
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
NPN complement: PBSS4130QA.
Alternatives
Features and benefits
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain hFE at high IC
- High energy efficiency due to less heat generation
- Reduced Printed-Circuit Board (PCB) area requirements
- Solderable side pads
- AEC-Q101 qualified
Applications
- Loadswitch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
參數(shù)類型
| 型號 | Package version | Package name | Size (mm) | channel type (e) | Ptot [max] (mW) | VCEO [max] (V) | IC [max] (A) | ICM [max] (A) | hFE [min] | hFE [typ] | fT [min] (MHz) | fT [typ] (MHz) | RCEsat@IC [typ] (mΩ) | RCEsat@IC [max] (mΩ) | VCEsat [max] (mV) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PBSS5130QA | SOT1215 | DFN1010D-3 | 1.1 x 1 x 0.37 | PNP | 1000.0 | -30.0 | -1.0 | -1.5 | 250.0 | 425.0 | 120.0 | 170.0 | 160.0 | 240.0 | -260.0 |
封裝
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSS5130QA | PBSS5130QAX (934067167115) |
Obsolete | 00" 10 10 |
DFN1010D-3 (SOT1215) |
SOT1215 |
REFLOW_BG-BD-1
|
暫無信息 |
| PBSS5130QAZ (934067167147) |
Obsolete | 00" 10 10 | SOT1215_147 |
環(huán)境信息
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號 | 化學成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PBSS5130QA | PBSS5130QAX | PBSS5130QA |
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| PBSS5130QA | PBSS5130QAZ | PBSS5130QA |
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Series
文檔 (9)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PBSS5130QA | 30 V, 1 A PNP low VCEsat (BISS) transistor | Data sheet | 2017-05-22 |
| SOT1215 | 3D model for products with SOT1215 package | Design support | 2019-10-07 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN1010D-3_SOT1215_mk | plastic, thermal enhanced ultra thin small outline package; 3 terminals; 0.75 mm pitch; 1.1 mm x 1 mm x 0.37 mm body | Marcom graphics | 2017-01-28 |
| SOT1215 | plastic, leadless thermal enhanced ultra thin small outline package with side-wettable flanks (SWF); 3 terminals; 0.75 mm pitch; 1.1 mm x 1 mm x 0.37 mm body | Package information | 2022-05-27 |
| PBSS5130QA_Nexperia_Product_Quality | PBSS5130QA Nexperia Product Quality | Quality document | 2019-05-20 |
| PBSS5130QA_Nexperia_Product_Reliability | PBSS5130QA Nexperia Product Reliability Quality document | Quality document | 2020-03-11 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PBSS5130QA | PBSS5130QA SPICE model | SPICE model | 2024-08-27 |
支持
如果您需要設計/技術(shù)支持，請告知我們并填寫 應答表 我們會盡快回復您。
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PBSS5130QA | PBSS5130QA SPICE model | SPICE model | 2024-08-27 |
| SOT1215 | 3D model for products with SOT1215 package | Design support | 2019-10-07 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PBSS5130QA
30 V, 1 A PNP low VCEsat (BISS) transistor
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