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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

PESD5V0L7BS

Low capacitance 7-fold bidirectional ESD protection diode arrays

Low capacitance 7-fold bidirectional ESD protection diode arrays in small plastic packages designed for the protection of up to seven transmission or data lines from damage caused by ElectroStatic Discharge (ESD) and other transients.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • ESD protection of up to seven lines
  • Low diode capacitance
  • Max. peak pulse power: PPP = 35 W
  • Low clamping voltage: VCL = 17 V
  • Ultra low leakage current: IRM = 3 nA
  • ESD protection of up to 10 kV
  • IEC 61000-4-2, level 4 (ESD)
  • IEC 61000-4-5 (surge); IPP = 2.5 A
  • AEC-Q101 qualified

Applications

  • Computers and peripherals
  • Communication systems
  • Audio and video equipment
  • High-speed data lines
  • Parallel ports

文檔 (2)

文件名稱 標(biāo)題 類型 日期
PESD5V0L7BAS_BS Low capacitance 7-fold bidirectional ESD protection diode arrays Data sheet 2023-04-13
PESD5V0L7BS PESD5V0L7BS SPICE model SPICE model 2024-10-14

支持

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模型

文件名稱 標(biāo)題 類型 日期
PESD5V0L7BS PESD5V0L7BS SPICE model SPICE model 2024-10-14

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.