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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

PESD5V0V1BSH

Low capacitance bidirectional ESD protection diode

Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family, designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a leadless ultra small and full encapsulated DFN0603-2 (SOD972) Surface-Mounted Device (SMD) package.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Bidirectional ESD protection of one line
  • Low diode capacitance Cd = 5 pF
  • Ultra flat package: 0.12 mm high
  • Ultra low leakage current: IRM < 1 nA
  • ESD protection up to 20 kV
  • IEC 61000-4-5 (surge), IPPM = 2.5 A

Applications

ESD and surge protection for:

  • Portable electronics
  • Audio and video equipment
  • Cellular handsets and accessories
  • Communication systems
  • Computers and peripherals

參數(shù)類型

型號 Package name
PESD5V0V1BSH DSN0402-2

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
PESD5V0V1BSH PESD5V0V1BSHYL
(934068241315)		 Obsolete SOD992
DSN0402-2
(SOD992) 		SOD992 SOD992_315

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
PESD5V0V1BSH PESD5V0V1BSHYL PESD5V0V1BSH rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (3)

文件名稱 標(biāo)題 類型 日期
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DSN0402-2_SOD992_mk silicon, leadless tiny package; 2 terminals; 0.25 mm pitch; 0.4 mm x 0.2 mm x 0.1 mm body Marcom graphics 2017-01-28
SOD992 silicon, leadless tiny package; 2 terminals; 0.25 mm pitch; 0.4 mm x 0.2 mm x 0.1 mm body Package information 2020-04-21

支持

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模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.