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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車(chē)應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

PMCB60XNE

30 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1006-3 (SOT8026) Surface-Mounted Device (SMD) package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage

  • Very fast switching

  • Ultra small package: 1.0 × 0.6 × 0.2 mm

  • Trench MOSFET technology

  • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)

Applications

  • Battery switch

  • High-speed line driver

  • Low-side load switch

  • Switching circuits

參數(shù)類(lèi)型

型號(hào) Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) RDSon [max] @ VGS = 2.5 V (mΩ) VESD (kV) (kV) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMCB60XNE SOT8026 DSN1006-3 Production N 1 30 12 55 75 2000 150 4.3 1.4 5 0.48 0.8 N 420 36 2022-02-21

封裝

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
PMCB60XNE PMCB60XNEZ
(934662892326)
Active M2 SOT8026
DSN1006-3
(SOT8026)
SOT8026 SOT8026_326

環(huán)境信息

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
PMCB60XNE PMCB60XNEZ PMCB60XNE rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (11)

文件名稱 標(biāo)題 類(lèi)型 日期
PMCB60XNE 30 V, N-channel Trench MOSFET Data sheet 2022-02-21
AN11304 MOSFET load switch PCB with thermal measurement Application note 2013-01-28
AN90009 Leakage of small-signal MOSFETs Application note 2019-11-08
AN90017 Load switches for mobile and computing applications Application note 2020-09-02
AN90036 Recommendations for Printed Circuit Board assembly of DSN1006-3 (SOT8026) Application note 2022-08-09
SOT8026 3D model for products with SOT8026 package Design support 2023-02-07
nexperia_document_leaflet_SsMOS_for_mobile_2022-CHN 適合移動(dòng)和便攜式設(shè)備的 大批量小信號(hào)MOSFET, 采用WLCSP和無(wú)引腳DFN封裝 Leaflet 2022-07-04
nexperia_document_leaflet_SsMOS_for_mobile_2022 High volume small-signal MOSFETs for mobile and portables, in WLCSP and leadless DFN packages Leaflet 2022-07-04
SOT8026 chip-scale package; 3 terminals; body 1.0 x 0.6 x 0.2 mm Package information 2023-02-28
SOT8026_326 DSN1006-3; Reel pack for SMD, 7''; Q3/T4 product orientation Packing information 2022-05-31
PMCB60XNE PMCB60XNE SPICE model SPICE model 2022-06-07

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫(xiě) 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類(lèi)型 日期
PMCB60XNE PMCB60XNE SPICE model SPICE model 2022-06-07
SOT8026 3D model for products with SOT8026 package Design support 2023-02-07

訂購(gòu)、定價(jià)與供貨

型號(hào) Orderable part number Ordering code (12NC) 狀態(tài) 包裝 Packing Quantity 在線購(gòu)買(mǎi)
PMCB60XNE PMCB60XNEZ 934662892326 Active SOT8026_326 10,000 訂單產(chǎn)品

樣品

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如果您沒(méi)有 Nexperia 的直接賬戶,我們的全球和地區(qū)分銷(xiāo)商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷(xiāo)商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可訂購(gòu)部件

型號(hào) 可訂購(gòu)的器件編號(hào) 訂購(gòu)代碼(12NC) 封裝 從經(jīng)銷(xiāo)商處購(gòu)買(mǎi)
PMCB60XNE PMCB60XNEZ 934662892326 SOT8026 訂單產(chǎn)品