可訂購部件
型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
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PMEG10020ELR-Q | PMEG10020ELR-QX | 934662913115 | SOD123W | 訂單產(chǎn)品 |
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Click here for more information100 V, 2 A low leakage current Schottky barrier rectifier
Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package.
Average forward current: IF(AV) ≤ 2 A
Reverse voltage: VR ≤ 100 V
Low forward voltage: VF = 770 mV
High power capability due to clip-bonding technology
Extremely low leakage current IR = 40 nA
High temperature Tj ≤ 175 °C
Qualified according to AEC-Q101 and recommended for use in automotive applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications
型號 | Package version | Package name | Size (mm) | VR [max] (V) | IF [max] (A) | Nr of functions | Configuration | IR [max] (μA) | Cd [max] (pF) |
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PMEG10020ELR-Q | SOD123W | CFP3 | 2.6 x 1.7 x 1 | 100.0 | 2.0 | single | single | 500.0 | 70.0 |
型號 | 可訂購的器件編號,(訂購碼(12NC)) | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
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PMEG10020ELR-Q | PMEG10020ELR-QX (934662913115) |
Active | K8 |
CFP3 (SOD123W) |
SOD123W |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOD123W_115 |
Part number | Description | Type | Quick links | Shop link |
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描述 NXP's ASLx500SHN and ASLx41xSHN Evaluation Board is designed to drive six LED strings with 150 mA to 1.6 A and 2 V to 60 V LED string voltage. Among the numerous Nexperia products on-board in the boost converter stage are 80 V MOSFETs in LFPAK56 and 100 V Schottky Rectifiers. The buck converter incorporates 80 V DFN2020 MOSFETs and 54 V TVS diodes.
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類型 Reference design
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Shop link
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型號 | 可訂購的器件編號 | 化學成分 | RoHS | RHF指示符 |
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PMEG10020ELR-Q | PMEG10020ELR-QX | PMEG10020ELR-Q |
文件名稱 | 標題 | 類型 | 日期 |
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PMEG10020ELR-Q | 100 V, 2 A low leakage current Schottky barrier rectifier | Data sheet | 2022-11-16 |
AN90002 | Wave soldering guidelines for flatpack packages | Application note | 2023-11-02 |
Nexperia_document_brochure_CFP_Schottky_rectifier | Schottky rectifiers in CFP packages | Brochure | 2020-01-28 |
SOD123W | 3D model for products with SOD123W package | Design support | 2019-01-22 |
Nexperia_Document_Leaflet_Schottky_rectifiers_in_CFP_CHN_2022 | CFP封裝的肖特基整流器 | Leaflet | 2022-07-01 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
CFP3_SOD123W_mk | plastic, surface mounted package; 2 terminals; 2.6 mm x 1.7 mm x 1 mm body | Marcom graphics | 2017-01-28 |
SOD123W | plastic, surface mounted package; 2 terminals; 2.6 mm x 1.7 mm x 1 mm body | Package information | 2020-04-21 |
SOD123W_115 | Reel pack for SMD, 7''; Q1/T1-Q2/T3 product orientation | Packing information | 2020-06-11 |
PMEG10020ELR-Q_Nexperia_Product_Reliability | PMEG10020ELR-Q Nexperia Product Reliability | Quality document | 2024-04-23 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
PMEG10020ELR | PMEG10020ELR SPICE Model | SPICE model | 2015-12-08 |
TN90007 | Evaluation of junction temperature and thermal stacks using the virtual junction | Technical note | 2024-09-02 |
TN90007 | Evaluation of junction temperature and thermal stacks using the virtual junction | Technical note | 2024-09-02 |
WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
如果您需要設計/技術支持,請告知我們并填寫 應答表 我們會盡快回復您。
文件名稱 | 標題 | 類型 | 日期 |
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PMEG10020ELR | PMEG10020ELR SPICE Model | SPICE model | 2015-12-08 |
SOD123W | 3D model for products with SOD123W package | Design support | 2019-01-22 |
型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
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PMEG10020ELR-Q | PMEG10020ELR-QX | 934662913115 | Active | SOD123W_115 | 3,000 | 訂單產(chǎn)品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.