可訂購部件
型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
---|---|---|---|---|
PSMN016-100YS | PSMN016-100YS,115 | 934064533115 | SOT669 | 訂單產(chǎn)品 |
進(jìn)一步了解Nexperia的豐富產(chǎn)品組合,比如二極管、雙極性晶體管、ESD保護(hù)器件、MOSFET器件、氮化鎵場效應(yīng)晶體管(GaN FET)、絕緣柵雙極晶體管(IGBT)以及模擬IC和邏輯IC。我們的器件廣泛應(yīng)用于汽車、工業(yè)、移動和消費等多個領(lǐng)域,幾乎為世界上所有電子設(shè)計提供支持。
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Click here for more informationN-channel 100 V 16.3 m? standard level MOSFET in LFPAK
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
Advanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PSMN016-100YS | SOT669 | LFPAK56; Power-SO8 | Production | N | 1 | 100 | 16.3 | 175 | 51 | 16 | 54 | 117 | 131 | 3 | N | 2744 | 205 | 2011-01-27 |
型號 | 可訂購的器件編號,(訂購碼(12NC)) | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
PSMN016-100YS | PSMN016-100YS,115 (934064533115) |
Active | 16100 |
LFPAK56; Power-SO8 (SOT669) |
SOT669 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT669_115 |
型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
---|---|---|---|---|
PSMN016-100YS | PSMN016-100YS,115 | PSMN016-100YS |
文件名稱 | 標(biāo)題 | 類型 | 日期 |
---|---|---|---|
PSMN016-100YS | N-channel 100 V, 16.3 mΩ standard level MOSFET in LFPAK | Data sheet | 2018-04-04 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
LFPAK56_POWER-SO8_SOT669_mk | plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body | Marcom graphics | 2017-01-28 |
SOT669 | plastic, single-ended surface-mounted package; 4 terminals | Package information | 2022-05-30 |
SOT669_115 | LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2022-05-10 |
Reliability_information_t6_sot669 | Reliability qualification information | Quality document | 2022-10-13 |
T6_SOT669_PSMN016-100YS_Nexperia_Quality_document | PSMN016-100YS Quality document | Quality document | 2022-10-13 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
PSMN016-100YS | PSMN016-100YS Thermal model | Thermal model | 2011-04-04 |
WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
如果您需要設(shè)計/技術(shù)支持,請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。
文件名稱 | 標(biāo)題 | 類型 | 日期 |
---|---|---|---|
PSMN016-100YS | PSMN016-100YS Thermal model | Thermal model | 2011-04-04 |
SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
---|---|---|---|---|---|---|
PSMN016-100YS | PSMN016-100YS,115 | 934064533115 | Active | SOT669_115 | 1,500 | 訂單產(chǎn)品 |
作為 Nexperia 的客戶,您可以通過我們的銷售機構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶,我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.