可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PSMN1R9-40YSB | PSMN1R9-40YSBX | 934665891115 | SOT669 | 訂單產(chǎn)品 |
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Click here for more informationPSMN1R9-40YSB
N-channel 40 V, 1.9 mOhm, 200 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology
200 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications.
Features and benefits
Optimized for improved EMC Performance
200 A continuous ID(max) rating
Avalanche rated, 100% tested at IAS = 180 A
Strong SOA (linear-mode) rating
NextPowerS3 technology delivers 'superfast switching with soft body-diode recovery'
Low Qrr, QG and QGD for high system efficiency and low EMI designs
Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage
High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C
Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints providing excellent board level reliability
Low parasitic inductance and resistance
Applications
Automation, control and instrumentation
Autonomous systems, Robotics and Cobots
DC-to-DC converters
Brushless DC motor control
Brushed motors
Battery isolation
Industrial load-switch and eFuse
Inrush management, hotswap
參數(shù)類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN1R9-40YSB | SOT669 | LFPAK56; Power-SO8 | Production | N | 1 | 40 | 1.9 | 175 | 200 | 7.6 | 56 | 194 | 26 | 3.1 | N | 4498 | 1407 | 2023-10-24 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PSMN1R9-40YSB | PSMN1R9-40YSBX (934665891115) |
Active | 1B9S40Y |
LFPAK56; Power-SO8 (SOT669) |
SOT669 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT669_115 |
環(huán)境信息
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PSMN1R9-40YSB | PSMN1R9-40YSBX | PSMN1R9-40YSB |
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文檔 (25)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PSMN1R9-40YSB | N-channel 40 V, 1.9 mOhm, 200 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Data sheet | 2024-02-13 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN50014 | Understanding the MOSFET peak drain current rating | Application note | 2022-03-28 |
| AN90003 | LFPAK MOSFET thermal design guide | Application note | 2023-08-22 |
| AN90011 | Half-bridge MOSFET switching and its impact on EMC | Application note | 2020-04-28 |
| AN90016 | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2020-09-03 |
| AN90034 | Nexperia Precision Electrothermal models in SPICE and VHDL-AMS for Power MOSFETs | Application note | 2024-04-30 |
| SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LFPAK56_POWER-SO8_SOT669_mk | plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| PSMN1R9-40YSB_V1_1 | PSMN1R9-40YSB Precision ElectroThermal (PET) LTspice model | PET SPICE model | 2024-03-13 |
| SOT669 | plastic, single-ended surface-mounted package; 4 terminals | Package information | 2022-05-30 |
| SOT669_115 | LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2022-05-10 |
| Reliability_information_t9_sot669 | Reliability information t9_sot669 | Quality document | 2022-10-18 |
| T9_SOT669_PSMN1R9-40YSB_Nexperia_Quality_document | PSMN1R9-40YSB Quality document | Quality document | 2023-11-14 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PSMN1R9-40YSB | PSMN1R9-40YSB SPICE model | SPICE model | 2023-11-06 |
| CauerModel_PSMN1R9-40YSB | Cauer model PSMN1R9-40YSB | Thermal model | 2023-11-03 |
| FosterModel_PSMN1R9-40YSB | Foster model PSMN1R9-40YS | Thermal model | 2023-11-03 |
| PSMN1R9-40YSB | PSMN1R9-40YSB RC thermal model | Thermal model | 2023-11-03 |
| PSMN1R9-40YSB_Cauer | PSMN1R9-40YSB Cauer model | Thermal model | 2023-11-03 |
| PSMN1R9-40YSB_Foster | PSMN1R9-40YSB Foster model | Thermal model | 2023-11-03 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
如果您需要設(shè)計/技術(shù)支持，請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PSMN1R9-40YSB_V1_1 | PSMN1R9-40YSB Precision ElectroThermal (PET) LTspice model | PET SPICE model | 2024-03-13 |
| PSMN1R9-40YSB | PSMN1R9-40YSB SPICE model | SPICE model | 2023-11-06 |
| CauerModel_PSMN1R9-40YSB | Cauer model PSMN1R9-40YSB | Thermal model | 2023-11-03 |
| FosterModel_PSMN1R9-40YSB | Foster model PSMN1R9-40YS | Thermal model | 2023-11-03 |
| PSMN1R9-40YSB | PSMN1R9-40YSB RC thermal model | Thermal model | 2023-11-03 |
| PSMN1R9-40YSB_Cauer | PSMN1R9-40YSB Cauer model | Thermal model | 2023-11-03 |
| PSMN1R9-40YSB_Foster | PSMN1R9-40YSB Foster model | Thermal model | 2023-11-03 |
| SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PSMN1R9-40YSB | PSMN1R9-40YSBX | 934665891115 | Active | SOT669_115 | 1,500 | 訂單產(chǎn)品 |
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PSMN1R9-40YSB
N-channel 40 V, 1.9 mOhm, 200 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology
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