可訂購部件
型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
---|---|---|---|---|
XS3A1T5157GS | XS3A1T5157GSH | 935690972125 | SOT1202 | 訂單產(chǎn)品 |
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Click here for more informationLow-ohmic single-pole double-throw analog switch
The XS3A1T5157 is a low-ohmic single-pole double-throw analog switch suitable for use as an analog or digital 2:1 multiplexer/demultiplexer. It has a digital select input (S), two independent inputs/outputs (Y1 and Y2) and a common input/output (Z).
Schmitt trigger action at the digital input makes the circuit tolerant to slower input rise and fall times. Low threshold digital input allows this device to be driven by 1.8 V logic levels in 3.3 V applications without significant increase in supply current ICC. This makes it possible for the XS3A1T5157 to switch 4.3 V signals with a 1.8 V digital controller, eliminating the need for logic level translation. The XS3A1T5157 allows signals with amplitude up to VCC to be transmitted from Z to Y1 or Y2, or from Y1 or Y2 to Z. Its low ON resistance (0.5 Ω) and flatness (0.13 Ω) ensures minimal attenuation and distortion of transmitted signals.
Wide supply voltage range from 1.4 V to 4.3 V
Very low ON resistance (peak):
1.6 Ω (typical) at VCC = 1.4 V
1.0 Ω (typical) at VCC = 1.65 V
0.55 Ω (typical) at VCC = 2.3 V
0.50 Ω (typical) at VCC = 2.7 V
0.50 Ω (typical) at VCC = 4.3 V
Break-before-make switching
High noise immunity
CMOS low-power consumption
Latch-up performance exceeds 100 mA per JESD78 Class II Level A
Low-switching threshold levels
Control input accepts voltages above supply voltage
Very low supply current, even when input is below VCC
High current handling capability (350 mA continuous current under 3.3 V supply)
ESD protection:
HBM ANSI/ESDA/JEDEC JS-001 class 3B exceeds 8000 V
CDM ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
IEC61000-4-2 contact discharge exceeds 8000 V for switch ports
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Mobile phone
Tablet / Notebook
Wearables
型號 | Configuration | VCC (V) | Logic switching levels | RON (Ω) | RON(FLAT) (Ω) | f(-3dB) (MHz) | THD (%) | Xtalk (dB) | Power dissipation considerations | Tamb (°C) | Package name |
---|---|---|---|---|---|---|---|---|---|---|---|
XS3A1T5157GS | SPDT-Z | 1.4?-?4.3 | CMOS/LVTTL | 0.5 | 0.2 | 40 | 0.03 | -90 | ultra low | -40~125 | XSON6 |
型號 | 可訂購的器件編號,(訂購碼(12NC)) | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
XS3A1T5157GS | XS3A1T5157GSH (935690972125) |
Active | aS |
XSON6 (SOT1202) |
SOT1202 |
REFLOW_BG-BD-1
|
暫無信息 |
型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
---|---|---|---|---|
XS3A1T5157GS | XS3A1T5157GSH | XS3A1T5157GS |
文件名稱 | 標(biāo)題 | 類型 | 日期 |
---|---|---|---|
XS3A1T5157 | Low-ohmic single-pole double-throw analog switch | Data sheet | 2024-08-01 |
Nexperia_document_guide_MiniLogic_MicroPak_201808 | MicroPak leadless logic portfolio guide | Brochure | 2018-09-03 |
SOT1202 | 3D model for products with SOT1202 package | Design support | 2023-02-02 |
xs3a1t5157 | XS3A1T5157 IBIS model | IBIS model | 2020-09-11 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT1202 | plastic, leadless extremely thin small outline package; 6 terminals; 0.35 mm pitch; 1 mm x 1mm x 0.35 mm body | Package information | 2022-06-01 |
XS3A1T5157GS_Nexperia_Product_Reliability | XS3A1T5157GS Nexperia Product Reliability | Quality document | 2024-06-16 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
MAR_SOT1202 | MAR_SOT1202 Topmark | Top marking | 2013-06-03 |
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文件名稱 | 標(biāo)題 | 類型 | 日期 |
---|---|---|---|
xs3a1t5157 | XS3A1T5157 IBIS model | IBIS model | 2020-09-11 |
SOT1202 | 3D model for products with SOT1202 package | Design support | 2023-02-02 |
型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
---|---|---|---|---|---|---|
XS3A1T5157GS | XS3A1T5157GSH | 935690972125 | Active | 暫無信息 | 5,000 | 訂單產(chǎn)品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.