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Click here for more informationBUK9628-100A
N-channel TrenchMOS logic level FET
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Features and benefits
AEC Q101 compliant
Low conduction losses due to low on-state resistance
Applications
Automotive and general purpose power switching
參數(shù)類型
型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BUK9628-100A | SOT404 | D2PAK | Production | N | 1 | 100 | 27 | 28 | 31 | 175 | 49 | 166 | 220 | 1.5 | Y | 3220 | 315 | 2010-10-18 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
型號(hào) | 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
BUK9628-100A | BUK9628-100A,118 (934055884118) |
Withdrawn / End-of-life | BUK9628 100A |
D2PAK (SOT404) |
SOT404 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT404_118 |
Series
文檔 (19)
文件名稱 | 標(biāo)題 | 類型 | 日期 |
---|---|---|---|
BUK9628-100A | N-channel TrenchMOS logic level FET | Data sheet | 2017-05-04 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
SOT404 | 3D model for products with SOT226 package | Design support | 2017-06-30 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
D2PAK_SOT404_mk | plastic, single-ended surface-mounted package (D2PAK); 3 terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body | Marcom graphics | 2017-01-28 |
SOT404 | plastic, single-ended surface-mounted package (D2PAK); 3 terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body | Package information | 2022-05-27 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
BUK9628_100A | BUK9628-100A Spice model | SPICE model | 2014-03-03 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。
模型
文件名稱 | 標(biāo)題 | 類型 | 日期 |
---|---|---|---|
BUK9628_100A | BUK9628-100A Spice model | SPICE model | 2014-03-03 |
SOT404 | 3D model for products with SOT226 package | Design support | 2017-06-30 |
訂購(gòu)、定價(jià)與供貨
型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
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樣品
作為 Nexperia 的客戶,您可以通過我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒有 Nexperia 的直接賬戶,我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.