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Click here for more information參數(shù)類(lèi)型
型號(hào) | Package name |
---|---|
74HCT4075PW | TSSOP14 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
型號(hào) | 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
74HCT4075PW | 74HCT4075PW,112 (935189120112) |
Obsolete | HCT4075 Standard Procedure Standard Procedure |
TSSOP14 (SOT402-1) |
SOT402-1 |
SSOP-TSSOP-VSO-WAVE
|
暫無(wú)信息 |
74HCT4075PW,118 (935189120118) |
Obsolete | HCT4075 Standard Procedure Standard Procedure | SOT402-1_118 |
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
---|---|---|---|---|
74HCT4075PW | 74HCT4075PW,112 | 74HCT4075PW | ||
74HCT4075PW | 74HCT4075PW,118 | 74HCT4075PW |
文檔 (8)
文件名稱 | 標(biāo)題 | 類(lèi)型 | 日期 |
---|---|---|---|
74HC_HCT4075 | Triple 3-input OR gate | Data sheet | 2024-03-21 |
AN11044 | Pin FMEA 74HC/74HCT family | Application note | 2019-01-09 |
SOT402-1 | 3D model for products with SOT402-1 package | Design support | 2023-02-02 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
TSSOP14_SOT402-1_mk | plastic, thin shrink small outline package; 14 leads; 0.65 mm pitch; 5 mm x 4.4 mm x 1.1 mm body | Marcom graphics | 2017-01-28 |
SOT402-1 | plastic, thin shrink small outline package; 14 leads; 0.65 mm pitch; 5 mm x 4.4 mm x 1.2 mm body | Package information | 2023-11-07 |
HCT_USER_GUIDE | HC/T User Guide | User manual | 1997-10-31 |
SSOP-TSSOP-VSO-WAVE | Footprint for wave soldering | Wave soldering | 2009-10-08 |
支持
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模型
文件名稱 | 標(biāo)題 | 類(lèi)型 | 日期 |
---|---|---|---|
SOT402-1 | 3D model for products with SOT402-1 package | Design support | 2023-02-02 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.