可訂購部件
型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經銷商處購買 |
---|---|---|---|---|
NXS0104BQ-Q100 | NXS0104BQ-Q100X | 935690811115 | SOT762-1 | 訂單產品 |
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Click here for more informationDual supply translating transceiver; open drain; auto?direction?sensing
The NXS0104?-?Q100 is a 4?-?bit, dual supply translating transceiver with auto direction sensing, that enables bidirectional voltage level translation. It features two 4?-?bit input?-?output ports (An and Bn), one output enable input (OE) and two supply pins (VCC(A) and VCC(B)). VCC(A) can be supplied at any voltage between 1.65 V and 3.6 V and VCC(B) can be supplied at any voltage between 2.3 V and 5.5 V, making the device suitable for translating between any of the voltage nodes (1.8 V, 2.5 V, 3.3 V and 5.0 V). Pins An and OE are referenced to VCC(A) and pins Bn are referenced to VCC(B). A LOW level at pin OE causes the outputs to assume a high?-?impedance OFF?-?state. This device is fully specified for partial power?-?down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply voltage range:
VCC(A): 1.65 V to 3.6 V and VCC(B): 2.3 V to 5.5 V
Maximum data rates:
Push-pull: 24 Mbps
IOFF circuitry provides partial Power-down mode operation
Inputs accept voltages up to 5.5 V
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2500 V for A port
HBM: ANSI/ESDA/JEDEC JS-001 class 3B exceeds 15000 V for B port
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
IEC61000-4-2 contact discharge exceeds 8000 V for B port
Latch-up performance exceeds 100 mA per JESD 78B Class II
Multiple package options
DHVQFN package with Side-Wettable Flanks enabling Automatic Optical Inspection (AOI) of solder joints
型號 | VCC(A) (V) | VCC(B) (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Nr of bits | Power dissipation considerations | Tamb (°C) | Package name |
---|---|---|---|---|---|---|---|---|---|
NXS0104BQ-Q100 | 1.65?-?3.6 | 2.3?-?5.5 | CMOS | - 0.02 / 1.0 | 6.0 | 4 | low | -40~125 | DHVQFN14 |
Model Name | 描述 |
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型號 | 可訂購的器件編號,(訂購碼(12NC)) | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
NXS0104BQ-Q100 | NXS0104BQ-Q100X (935690811115) |
Active | S0104 |
DHVQFN14 (SOT762-1) |
SOT762-1 | SOT762-1_115 |
文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
NXS0104_Q100 | Dual supply translating transceiver; open drain; auto?direction?sensing | Data sheet | 2024-04-04 |
AN90014 | Pin FMEA for NXS family | Application note | 2020-03-25 |
SOT762-1 | 3D model for products with SOT762-1 package | Design support | 2019-10-03 |
nxs0104 | NXS0104 IBIS model | IBIS model | 2020-11-05 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
DHVQFN14_SOT762-1_mk | plastic, dual in-line compatible thermal enhanced very thin quad flat package; no leads; 14 terminals; 0.5 mm pitch; 2.5 mm x 3 mm x 0.85 mm body | Marcom graphics | 2017-01-28 |
SOT762-1 | plastic, leadless dual in-line compatible thermal enhanced very thin quad flat package; 14 terminals; 0.5 mm pitch; 2.5 x 3 x 1 mm body | Package information | 2023-04-05 |
SOT762-1_115 | DHVQFN14; Reel pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2020-04-21 |
NXS0104BQ-Q100_Nexperia_Product_Reliability | NXS0104BQ-Q100 Nexperia Product Reliability | Quality document | 2024-06-16 |
型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
---|---|---|---|---|---|---|
NXS0104BQ-Q100 | NXS0104BQ-Q100X | 935690811115 | Active | SOT762-1_115 | 3,000 | 訂單產品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.