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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

PDTA124EE

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ

PNP Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD) plastic packages.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • 100 mA output current capability

  • Built-in bias resistors

  • Simplified circuit design

  • Reduces component count

  • Reduces pick and place costs

  • AEC-Q101 qualified

Applications

  • Digital applications in automotive and industrial segments

  • Control of IC inputs

  • Cost-saving alternative for BC847/857 series in digital applications

  • Switching loads

參數(shù)類型

型號(hào) Package version Package name Size (mm)
PDTA124EE SOT416 SC-75 1.6 x 0.75 x 0.9

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào),(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
PDTA124EE PDTA124EE,115
(934051820115)
Obsolete SOT416
SC-75
(SOT416)
SOT416 SOT416_115
PDTA124EE/A2,115
(934063179115)
Obsolete SOT416_115

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
PDTA124EE PDTA124EE,115 PDTA124EE rohs rhf rhf
PDTA124EE PDTA124EE/A2,115 PDTA124EE rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (5)

文件名稱 標(biāo)題 類型 日期
PDTA124E_SER PNP resistor-equipped transistors R1 = 22 kOhm, R2 = 22 kOhm Data sheet 2011-12-15
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LSYMTRA Letter Symbols - Transistors; General Other type 1999-05-06
SOT416 plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body Package information 2020-04-21
PDTA124EE PDTA124EE SPICE model SPICE model 2024-08-27

支持

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模型

文件名稱 標(biāo)題 類型 日期
PDTA124EE PDTA124EE SPICE model SPICE model 2024-08-27

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.