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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產(chǎn)品(AEC-Q100/Q101)

74LVC3G16GF

Triple buffer

The 74LVC3G16 provides three buffers.

The inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of the 74LVC3G16 as a translator in a mixed 3.3 V and 5 V environment.

This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 1.65 V to 5.5 V

  • 5 V tolerant input/output for interfacing with 5 V logic

  • High noise immunity

  • ±24 mA output drive (VCC = 3.0 V)

  • CMOS low power consumption

  • Latch-up performance exceeds 250 mA

  • Direct interface with TTL levels

  • Complies with JEDEC standard:

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8B/JESD36 (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
74LVC3G16GF 74LVC3G16GFX
(935307607115)
Obsolete no package information

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
74LVC3G16GF 74LVC3G16GFX 74LVC3G16GF rohs rhf rhf
品質(zhì)及可靠性免責聲明

文檔 (2)

文件名稱 標題 類型 日期
74LVC3G16 Triple buffer Data sheet 2024-05-02
lvc3g16 74LVC3G16 IBIS model IBIS model 2015-11-09

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模型

文件名稱 標題 類型 日期
lvc3g16 74LVC3G16 IBIS model IBIS model 2015-11-09

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.