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Click here for more information74ABT543AD
Octal latched transceiver with dual enable; 3-state
The 74ABT543A high performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.
The 74ABT543A octal registered transceiver contains two sets of D-type latches for temporary storage of data flowing in either direction. Separate latch enable (LEAB, LEBA) and output enable (OEAB, OEBA) inputs are provided for each register to permit independent control of data transfer in either direction. The outputs are guaranteed to sink 64 mA.
Features and benefits
- Combines 74ABT245 and 74ABT373 type functions in one device
- 8-bit octal transceiver with D-type latch
- Back-to-back registers for storage
- Separate controls for data flow in each direction
- Live insertion and extraction permitted
- Output capability: +64 mA to -32 mA
- Power-up 3-state
- Power-up reset
- Latch-up protection exceeds 500 mA per JESD78B class II level A
- ESD protection:
- HBM JESD22-A114F exceeds 2000 V
- MM JESD22-A115-A exceeds 200 V
Applications
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74ABT543AD | 74ABT543AD,112 (935169490112) |
Obsolete | 74ABT543AD Standard Procedure Standard Procedure | no package information | |||
| 74ABT543AD,118 (935169490118) |
Obsolete | 74ABT543AD Standard Procedure Standard Procedure | |||||
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74ABT543AD | 74ABT543AD,112 | 74ABT543AD |
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| 74ABT543AD | 74ABT543AD,118 | 74ABT543AD |
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支持
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.