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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74ALVT16601DGG

18-bit universal bus transceiver; 3-state

The 74ALVT16601 is a high-performance Bipolar Complementary Metal Oxide Semiconductor (BiCMOS) product designed for VCC operation at 2.5 V and 3.3 V with I/O compatibility up to 5 V. This device is an 18-bit universal transceiver featuring non-inverting 3-state bus compatible outputs in both send and receive directions. Data flow in each direction is controlled by output enable (OEAB and OEBA), latch enable (LEAB and LEBA), and clock (CPAB and CPBA) inputs. For A-to-B data flow, the device operates in the transparent mode when LEAB is HIGH. When LEAB is LOW, the A-bus data is latched if CPAB is held at a HIGH or LOW level. If LEAB is LOW, the A-bus data is stored in the latch/flip-flop on the LOW-to-HIGH transition of CPAB. When OEAB is LOW, the outputs are active. When OEAB is HIGH, the outputs are in the high-impedance state. The clocks can be controlled with the clock enable inputs (CEAB and CEBA).

Data flow for B-to-A is similar to that of A-to-B but uses OEBA, LEBA and CPBA.

Active bus hold circuitry is provided to hold unused or floating data inputs at a valid logic level.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • 18-bit bidirectional bus interface
  • 5 V I/O compatible
  • 3-state buffers
  • Output capability: +64 mA and -32 mA
  • TTL input and output switching levels
  • Input and output interface capability to systems at 5 V supply
  • Bus hold data inputs eliminate the need for external pull-up resistors to hold unused inputs
  • Live insertion and extraction permitted
  • Power-up reset
  • Power-up 3-state
  • No bus current loading when output is tied to 5 V bus
  • Positive-edge triggered clock inputs
  • Latch-up protection:
    • JESD78: exceeds 500 mA
  • ESD protection:
    • MIL STD 883, method 3015: exceeds 2000 V
    • Machine model: exceeds 200 V

Applications

參數(shù)類型

型號 Package name
74ALVT16601DGG TSSOP56

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74ALVT16601DGG 74ALVT16601DGG,112
(935219460112)
Obsolete ALVT16601 Standard Procedure Standard Procedure SOT364-1
TSSOP56
(SOT364-1)
SOT364-1 SSOP-TSSOP-VSO-WAVE
暫無信息
74ALVT16601DGG,118
(935219460118)
Obsolete ALVT16601 Standard Procedure Standard Procedure SOT364-1_118
74ALVT16601DGGS
(935219460512)
Obsolete ALVT16601 Standard Procedure Standard Procedure 暫無信息
74ALVT16601DGGY
(935219460518)
Obsolete ALVT16601 Standard Procedure Standard Procedure 暫無信息

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
74ALVT16601DGG 74ALVT16601DGG,112 74ALVT16601DGG rohs rhf rhf
74ALVT16601DGG 74ALVT16601DGG,118 74ALVT16601DGG rohs rhf rhf
74ALVT16601DGG 74ALVT16601DGGS 74ALVT16601DGG rohs rhf rhf
74ALVT16601DGG 74ALVT16601DGGY 74ALVT16601DGG rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (7)

文件名稱 標(biāo)題 類型 日期
74ALVT16601 18-bit universal bus transceiver; 3-state Data sheet 2005-07-04
SOT364-1 3D model for products with SOT364-1 package Design support 2020-01-22
alvt16601 alvt16601 IBIS model IBIS model 2013-04-08
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT364-1 plastic, thin shrink small outline package; 56 leads; 0.5 mm pitch; 14 mm x 6.1 mm x 1.2 mm body Package information 2022-06-23
alvt16 alvt16 Spice model SPICE model 2013-05-07
SSOP-TSSOP-VSO-WAVE Footprint for wave soldering Wave soldering 2009-10-08

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
alvt16601 alvt16601 IBIS model IBIS model 2013-04-08
alvt16 alvt16 Spice model SPICE model 2013-05-07
SOT364-1 3D model for products with SOT364-1 package Design support 2020-01-22

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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