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Click here for more information74LV08DB
Quad 2-input AND gate
The 74LV08 is a quad 2-input AND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess VCC.
Alternatives
Features and benefits
Wide supply voltage range from 1.0 V to 5.5 V
CMOS low power dissipation
Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
Optimized for low voltage applications: 1.0 V to 3.6 V
Accepts TTL input levels between VCC = 2.7 V and VCC = 3.6 V
Typical output ground bounce < 0.8 V at VCC = 3.3 V and Tamb = 25 °C
Typical HIGH-level output voltage (VOH) undershoot: > 2 V at VCC = 3.3 V and Tamb = 25 °C
Complies with JEDEC standards:
- JESD8-7 (1.65 V to 1.95 V)
- JESD8-5 (2.3 V to 2.7 V)
- JESD8C (2.7 V to 3.6 V)
- JESD36 (4.5 V to 5.5 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
PCB Symbol, Footprint and 3D Model
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封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74LV08DB | 74LV08DB,112 (935169270112) |
Obsolete | no package information | ||||
| 74LV08DB,118 (935169270118) |
Obsolete | ||||||
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74LV08DB | 74LV08DB,112 | 74LV08DB |
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| 74LV08DB | 74LV08DB,118 | 74LV08DB |
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支持
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模型
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| 74lv08 | 74lv08 IBIS model | IBIS model | 2016-05-25 |
PCB Symbol, Footprint and 3D Model
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.