可訂購(gòu)部件
型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷(xiāo)商處購(gòu)買(mǎi) |
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74AUP1G885GN | 74AUP1G885GN,115 | 935292216115 | SOT1116 | 訂單產(chǎn)品 |
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Click here for more informationLow-power dual function gate
The 74AUP1G885 is a dual function gate. The output state of the outputs (1Y, 2Y) is determined by the inputs (A, B and C). The output 1Y provides the Boolean function: 1Y = A × C. The output 2Y provides the Boolean function: 2Y = A × B + A × C.
Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.
This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.
Wide supply voltage range from 0.8 V to 3.6 V
CMOS low power dissipation
High noise immunity
Low static power consumption; ICC = 0.9 μA (maximum)
Overvoltage tolerant inputs to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial Power-down mode operation
Latch-up performance exceeds 100 mA per JESD78 Class II
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
型號(hào) | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Package name |
---|---|---|---|---|---|---|---|---|---|
74AUP1G885GN | 0.8?-?3.6 | CMOS | ± 1.9 | 7.6 | 70 | 1 | ultra low | -40~125 | XSON8 |
Model Name | 描述 |
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型號(hào) | 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
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74AUP1G885GN | 74AUP1G885GN,115 (935292216115) |
Active | 58 |
XSON8 (SOT1116) |
SOT1116 |
REFLOW_BG-BD-1
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SOT1116_115 |
型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
---|---|---|---|---|
74AUP1G885GN | 74AUP1G885GN,115 | 74AUP1G885GN |
文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
---|---|---|---|
74AUP1G885 | Low-power dual function gate | Data sheet | 2024-08-12 |
AN11052 | Pin FMEA for AUP family | Application note | 2019-01-09 |
Nexperia_document_guide_MiniLogic_MicroPak_201808 | MicroPak leadless logic portfolio guide | Brochure | 2018-09-03 |
SOT1116 | 3D model for products with SOT1116 package | Design support | 2023-02-02 |
aup1g885 | aup1g885 IBIS model | IBIS model | 2013-04-07 |
Nexperia_document_Logic_CombinationLogic_infocard_201710 | Combination logic solutions card | Leaflet | 2019-08-09 |
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Leaflet | 2019-04-12 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT1116 | plastic, leadless extremely thin small outline package; 8 terminals; 0.3 mm pitch; 1.2 mm x 1 mm x 0.35 mm body | Package information | 2022-06-02 |
SOT1116_115 | XSON8 ; Reel pack for SMD, 7''; Q1/T1 product orientation | Packing information | 2020-04-21 |
74AUP1G885GN_Nexperia_Product_Reliability | 74AUP1G885GN Nexperia Product Reliability | Quality document | 2024-06-16 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
MAR_SOT1116 | MAR_SOT1116 Topmark | Top marking | 2013-06-03 |
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Model Name | 描述 |
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型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線(xiàn)購(gòu)買(mǎi) |
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74AUP1G885GN | 74AUP1G885GN,115 | 935292216115 | Active | SOT1116_115 | 5,000 | 訂單產(chǎn)品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.