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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認證產(chǎn)品(AEC-Q100/Q101)

74AXP1G58GM

Low-power configurable multiple function gate

The 74AXP1G58 is a configurable multiple function gate with Schmitt-trigger inputs. The device can be configured as any of the following logic functions AND, OR, NAND, NOR, XOR, inverter and buffer. All inputs can be connected directly to VCC or GND.

This device ensures very low static and dynamic power consumption across the entire VCC range from 0.7 V to 2.75 V. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 0.7 V to 2.75 V

  • Low input capacitance; CI = 0.5 pF (typical)

  • Low output capacitance; CO = 1.0 pF (typical)

  • Low dynamic power consumption; CPD = 2.7 pF at VCC = 1.2 V (typical)

  • Low static power consumption; ICC = 0.6 μA (85 °C maximum)

  • High noise immunity

  • Complies with JEDEC standard:

    • JESD8-12A.01 (1.1 V to 1.3 V)

    • JESD8-11A.01 (1.4 V to 1.6 V)

    • JESD8-7A (1.65 V to 1.95 V)

    • JESD8-5A.01 (2.3 V to 2.7 V)

  • ESD protection:

    • HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV

    • CDM JESD22-C101E exceeds 1000 V

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Inputs accept voltages up to 2.75 V

  • Low noise overshoot and undershoot < 10% of VCC

  • IOFF circuitry provides partial power-down mode operation

  • Multiple package options

  • Specified from -40 °C to +85 °C

參數(shù)類型

型號 VCC (V) Logic switching levels Output drive capability (mA) tpd (ns) fmax (MHz) Nr of bits Power dissipation considerations Tamb (°C) Package name
74AXP1G58GM 0.7?-?2.75 CMOS ± 4.5 4.5 70 1 ultra low -40~85 XSON6

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
74AXP1G58GM 74AXP1G58GMH
(935301599125)
Discontinued / End-of-life RK SOT886
XSON6
(SOT886)
SOT886 REFLOW_BG-BD-1
SOT886_125

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
74AXP1G58GM 74AXP1G58GMH 74AXP1G58GM rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (13)

文件名稱 標題 類型 日期
74AXP1G58 Low-power configurable multiple function gate Data sheet 2021-10-07
Nexperia_document_guide_MiniLogic_MicroPak_201808 MicroPak leadless logic portfolio guide Brochure 2018-09-03
SOT886 3D model for products with SOT886 package Design support 2019-10-03
axp1g58 74AXP1G58 IBIS model IBIS model 2015-09-08
Nexperia_document_leaflet_Logic_AXP_technology_portfolio_201904 AXP – Extremely low-power logic technology portfolio Leaflet 2019-04-05
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
AXP_banner3 Low-power configurable multiple function gate Marcom graphics 2013-06-25
DFN1410-6_SOT886_mk plastic, extremely thin small outline package; no leads; 6 terminals; 0.6 mm pitch; 1 mm x 1.45 mm x 0.5 mm body Marcom graphics 2017-01-28
XSON6_SOT886_mk plastic, extremely thin small outline package; no leads; 6 terminals; 0.6 mm pitch; 1 mm x 1.45 mm x 0.5 mm body Marcom graphics 2017-01-28
SOT886 plastic, leadless extremely thin small outline package; 6 terminals; 0.5 mm pitch; 1 mm x 1.45 mm x 0.5 mm body Package information 2022-06-01
74AXP1G58GM_Nexperia_Product_Reliability 74AXP1G58GM Nexperia Product Reliability Quality document 2022-05-04
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
MAR_SOT886 MAR_SOT886 Topmark Top marking 2013-06-03

支持

如果您需要設(shè)計/技術(shù)支持,請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。

模型

文件名稱 標題 類型 日期
axp1g58 74AXP1G58 IBIS model IBIS model 2015-09-08
SOT886 3D model for products with SOT886 package Design support 2019-10-03

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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