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Click here for more information74HC688DB
8-bit magnitude comparator
The 74HC688 is an 8-bit magnitude comparator. It performs comparisons of two 8?-?bit binary or BCD words. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.
Alternatives
Features and benefits
Compare two 8-bit words
Wide supply voltage range from 2.0 V to 6.0 V
CMOS input levels
CMOS low power dissipation
High noise immunity
Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
Complies with JEDEC standards
JESD8C (2.7 V to 3.6 V)
JESD7A (2.0 V to 6.0 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
PCB Symbol, Footprint and 3D Model
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封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74HC688DB | 74HC688DB,112 (935188760112) |
Obsolete | no package information | ||||
| 74HC688DB,118 (935188760118) |
Obsolete | ||||||
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74HC688DB | 74HC688DB,112 | 74HC688DB |
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| 74HC688DB | 74HC688DB,118 | 74HC688DB |
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文檔 (4)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 74HC688 | 8-bit magnitude comparator | Data sheet | 2024-08-05 |
| AN11044 | Pin FMEA 74HC/74HCT family | Application note | 2019-01-09 |
| D12_PC_sch_ver2_0 | D12_PC_sch_ver2_0 | Other type | 2023-09-12 |
| HCT_USER_GUIDE | HC/T User Guide | User manual | 1997-10-31 |
支持
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模型
No documents available
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.