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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

單低VCEsat (BISS)功率晶體管

使您的設(shè)計(jì)保持最低功耗和發(fā)熱

我們的‘突破性小信號(hào)’(BISS)晶體管名副其實(shí),在提供最優(yōu)電源性能的同時(shí)節(jié)省空間。這些低VCEsat器件與采用同樣封裝的標(biāo)準(zhǔn)晶體管相比,功率耗損更低, 能效更高。它們的靈活性更高,可幫助簡(jiǎn)化電路布局,且采用更小型的封裝,為您節(jié)省寶貴的PCB空間。

參數(shù)搜索

Low VCEsat (BISS) power transistors single
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產(chǎn)品

型號(hào) 描述 狀態(tài) 快速訪問(wèn)
LFPAK bipolar transistors Nexperia bipolar transistors in LFPAK56 and LFPAK56D - the true power packages for smart efficiency ACT
PHPT60406NY 40 V, 6 A NPN high power bipolar transistor Production
PHPT60406PY 40 V, 6 A PNP high power bipolar transistor Production
PHPT60410NY 40 V, 10 A NPN high power bipolar transistor Production
PHPT60410PY 40 V, 10 A PNP high power bipolar transistor Production
PHPT60415NY 40 V, 15 A NPN high power bipolar transistor Production
PHPT60415PY 40 V, 15 A PNP high power bipolar transistor Production
PHPT60603NY 60V, 3 A NPN high power bipolar transistor Production
PHPT60603PY 60 V, 3 A PNP high power bipolar transistor Production
PHPT60606NY 60 V, 6 A NPN high power bipolar transistor Production
PHPT60606PY 60 V, 6 A PNP high power bipolar transistor Production
PHPT60610NY 60 V, 10 A NPN high power bipolar transistor Production
PHPT60610PY 60 V, 10 A PNP high power bipolar transistor Production
PHPT61003PY 100 V, 3A PNP high power bipolar transistor Production
PHPT61006PY 100 V, 6 A PNP high power bipolar transistor Production
PHPT61010PY 100 V, 10 A PNP high power bipolar transistor Production
PBSS4620PA-Q 20 V, 6 A NPN low VCEsat transistor Production
PBSS5540Z-Q 40 V low VCEsat PNP transistor Production
PHPT60406NY-Q 40 V, 6 A NPN high power bipolar transistor Production
PHPT60406PY-Q 40 V, 6 A PNP high power bipolar transistor Production
PHPT60410NY-Q 40 V, 10 A NPN high power bipolar transistor Production
PHPT60410PY-Q 40 V, 10 A PNP high power bipolar transistor Production
PHPT60415NY-Q 40 V, 15 A NPN high power bipolar transistor Production
PHPT60415PY-Q 40 V, 15 A PNP high power bipolar transistor Production
PHPT60603NY-Q 60 V, 3 A NPN high power bipolar transistor Production
PHPT60603PY-Q 60 V, 3 A PNP high power bipolar transistor Production
PHPT60606NY-Q 60 V, 6 A NPN high power bipolar transistor Production
PHPT60606PY-Q 60 V, 6 A PNP high power bipolar transistor Production
PHPT60610NY-Q 60 V, 10 A NPN high power bipolar transistor Production
PHPT60610PY-Q 60 V, 10 A PNP high power bipolar transistor Production
PHPT61003NY-Q 100 V, 3 A NPN high power bipolar transistor Production
PHPT61006NY-Q 100 V, 6 A NPN high power bipolar transistor Production
PHPT61006PY-Q 100 V, 6 A PNP high power bipolar transistor Production
PHPT61010NY-Q 100 V, 10 A NPN high power bipolar transistor Production
PHPT61010PY-Q 100 V, 10 A PNP high power bipolar transistor Production
Visit our documentation center for all documentation

Marcom graphics (1)

文件名稱 標(biāo)題 類型 日期
LFPAK56_POWER-SO8_SOT669_mk.png plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28

Selection guide (1)

文件名稱 標(biāo)題 類型 日期
Nexperia_Selection_guide_2023.pdf Nexperia Selection Guide 2023 Selection guide 2023-05-10

如果您有支持方面的疑問(wèn),請(qǐng)告知我們。如需獲得設(shè)計(jì)支持,請(qǐng)告知我們并填寫應(yīng)答表,我們會(huì)盡快回復(fù)您。

聯(lián)系我們獲得進(jìn)一步支持。


交叉參考

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