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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車(chē)應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

BAS116T

Single low leakage current switching diode

Single low leakage current switching diode, encapsulated in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • High switching speed: trr = 0.8 μs
  • Low leakage current: 3 pA
  • Repetitive peak reverse voltage: VRRM ≤ 85 V
  • AEC-Q101 qualified
  • Low capacitance: Cd = 2 pF
  • Reverse voltage: VR ≤ 75 V
  • Ultra small SMD plastic package

Applications

  • Low leakage current applications
  • General-purpose switching
  • Voltage clamping
  • Reverse polarity protection

參數(shù)類(lèi)型

型號(hào) Package version Package name Size (mm)
BAS116T SOT416 SC-75 1.6 x 0.75 x 0.9

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
BAS116T BAS116T,115
(934063959115)		 Obsolete SOT416
SC-75
(SOT416) 		SOT416 SOT416_115

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
BAS116T BAS116T,115 BAS116T rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (4)

文件名稱(chēng) 標(biāo)題 類(lèi)型 日期
BAS116T Single low leakage current switching diode Data sheet 2012-07-10
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT416 plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body Package information 2020-04-21
BAS116T BAS116T SPICE model SPICE model 2024-10-14

支持

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模型

文件名稱(chēng) 標(biāo)題 類(lèi)型 日期
BAS116T BAS116T SPICE model SPICE model 2024-10-14

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.