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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認證產(chǎn)品(AEC-Q100/Q101)

PESD4USB3BCTBR-Q

Extremely low capacitance bidirectional ESD protection diode array

This bidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against Electrostatic Discharge (ESD).

The device is encapsulated in a leadless small DFN2510A-10 (SOT1176-2) plastic package and provides ESD protection up to 15 kV exceeding IEC 61000-4-2 level 4 and fulfilling ISO 10605.

Features and benefits

  • Bidirectional ESD protection for four signal lines

  • VRWM = 3.3 V device

  • Extremely low clamping voltage to protect sensitive I/Os

  • Extremely low clamping voltage: 5.4 V for 6.5 A 8/20 μs surge

  • IEC 61000-4-4 robust up to 40 A into a 50 Ohm termination (2 kV)

  • IEC 61000-4-5 (surge): IPP = 8.2 A peak pulse (average measured)

  • Typical line capacitance of only 0.19 pF

  • ESD protection up to ±15 kV according to IEC 61000-4-2

  • Leadless ultra small DFN2510A-10 (SOT1176-2) surface mount package

  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Infotainment applications: USB 2.0, USB 3.2 and HDMI 2.1

  • Automotive A/V monitors, display and cameras

  • SerDes: GMSL, APIX, FPD-Link and LVDS

參數(shù)類型

型號 Package version Package name Size (mm) Configuration Nr of lines VRWM (V) (V) Cd [typ] (pF) IPPM [max] (A) VESD (kV) (kV)
PESD4USB3BCTBR-Q SOT1176-2 DFN2510A-10 1.0 x 2.5 x 0.5 Bidirectional 4 3.3 0.19 6.5 15

封裝

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
PESD4USB3BCTBR-Q PESD4USB3BCTBR-QZ
(934665070471)
Active Q9 SOT1176-2
DFN2510A-10
(SOT1176-2)
SOT1176-2 暫無信息

環(huán)境信息

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
PESD4USB3BCTBR-Q PESD4USB3BCTBR-QZ PESD4USB3BCTBR-Q rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (4)

文件名稱 標(biāo)題 類型 日期
PESD4USB3BCTBR-Q Extremely low capacitance bidirectional ESD protection diode array Data sheet 2023-11-09
SOT1176-2 3D model for products with SOT1176-2 package Design support 2023-02-07
SOT1176-2 plastic, extremely thin small outline package; no leads; 10 terminals; body 1.0 x 2.5 x 0.5 mm Package information 2021-09-08
PESD4USB3BCTBR-Q_Nexperia_Product_Reliability PESD4USB3BCTBR-Q Nexperia Product Reliability Quality document 2024-04-29

支持

如果您需要設(shè)計/技術(shù)支持,請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
SOT1176-2 3D model for products with SOT1176-2 package Design support 2023-02-07

訂購、定價與供貨

型號 Orderable part number Ordering code (12NC) 狀態(tài) 包裝 Packing Quantity 在線購買
PESD4USB3BCTBR-Q PESD4USB3BCTBR-QZ 934665070471 Active 暫無信息 5,000 訂單產(chǎn)品

樣品

作為 Nexperia 的客戶,您可以通過我們的銷售機構(gòu)訂購樣品。

如果您沒有 Nexperia 的直接賬戶,我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可訂購部件

型號 可訂購的器件編號 訂購代碼(12NC) 封裝 從經(jīng)銷商處購買
PESD4USB3BCTBR-Q PESD4USB3BCTBR-QZ 934665070471 SOT1176-2 訂單產(chǎn)品
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