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Click here for more informationBUK9C10-65BIT
N-channel TrenchPLUS logic level FET
N-channel enhancement mode field-effect power transistor in SOT427. This device is manufactured using Nexperia's High-Performance TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes.
Features and benefits
- AEC-Q101 compliant
- Low conduction losses due to low on-state resistance
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Powertrain, chassis and body applications
參數(shù)類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK9C10-65BIT | SOT427 | D2PAK-7 | End of life | N | 1 | 65 | 8.3 | 10 | 11 | 150 | 75 | 21.6 | 171 | 0.12 | 1.5 | Y | 4170 | 521 | 2010-09-02 |
封裝
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| BUK9C10-65BIT | BUK9C10-65BIT,118 (934063235118) |
Withdrawn / End-of-life | BUK9C10 65BIT |
D2PAK-7 (SOT427) |
SOT427 | SOT427_118 |
環(huán)境信息
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號 | 化學成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| BUK9C10-65BIT | BUK9C10-65BIT,118 | BUK9C10-65BIT |
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Series
文檔 (14)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| BUK9C10-65BIT | N-channel TrenchPLUS logic level FET | Data sheet | 2017-05-04 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT427 | plastic, single-ended surface-mounted package (D2PAK-7); 7 leads; 1.27 mm pitch; 11 mm x 10 mm x 4.3 mm body | Package information | 2020-04-21 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
支持
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模型
No documents available
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
BUK9C10-65BIT
N-channel TrenchPLUS logic level FET
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