Half-bridge ASFETs for space constrained applications feature:
- 60% lower parasitic inductance due to internal clip connection
- 30% space saving on PCB compared to LFPAK56D dual
- Flexible leads for BLR
- Industry leading low Rth(j-mb) of LFPAK ensures MOSFET junction temperature can be kept under control even in the most compact of designs
- As with all motor applications, there is a level of system vibration that cannot be dampened. LFPAK56D-HB brings a unique level of board level reliability and ruggedness.
Featured products
Featured documents
Latest videos
參數(shù)搜索
產(chǎn)品
型號(hào) | 描述 | 狀態(tài) | 快速訪問(wèn) |
---|---|---|---|
PSMN013-40VLD | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) | Production | |
PSMN4R2-40VSH | Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) | Production |
Application note (1) |
|||
---|---|---|---|
文件名稱 | 標(biāo)題 | 類型 | 日期 |
AN90011.pdf | Half-bridge MOSFET switching and its impact on EMC | Application note | 2020-04-28 |
Selection guide (1) |
|||
文件名稱 | 標(biāo)題 | 類型 | 日期 |
Nexperia_Selection_guide_2023.pdf | Nexperia Selection Guide 2023 | Selection guide | 2023-05-10 |
如果您有支持方面的疑問(wèn),請(qǐng)告知我們。如需獲得設(shè)計(jì)支持,請(qǐng)告知我們并填寫技術(shù)支持表格,我們會(huì)盡快回復(fù)您。
請(qǐng)?jiān)L問(wèn)我們的社區(qū)論壇或聯(lián)系我們。