可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PHB29N08T | PHB29N08T,118 | 934057125118 | SOT404 | 訂單產(chǎn)品 |
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Click here for more informationPHB29N08T
N-channel TrenchMOS standard level FET
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
High noise immunity due to high gate threshold voltage
Low conduction losses due to low on-state resistance
Applications
Industrial motor control
參數(shù)類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PHB29N08T | SOT404 | D2PAK | Production | N | 1 | 75 | 175 | 27 | 9 | 19 | 88 | 65 | 4 | N | 810 | 140 | 2010-09-02 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PHB29N08T | PHB29N08T,118 (934057125118) |
Active | PHB 29N08T |
D2PAK (SOT404) |
SOT404 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT404_118 |
文檔 (22)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PHB29N08T | N-channel TrenchMOS standard level FET | Data sheet | 2017-06-08 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| SOT404 | 3D model for products with SOT226 package | Design support | 2017-06-30 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| D2PAK_SOT404_mk | plastic, single-ended surface-mounted package (D2PAK); 3 terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body | Marcom graphics | 2017-01-28 |
| SOT404 | plastic, single-ended surface-mounted package (D2PAK); 3 terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body | Package information | 2022-05-27 |
| SOT404_118 | D2PAK; Reel pack; SMD, 13" Q2/T3 standard product orientation Orderable part number ending ,118 or J Ordering code (12NC) ending 118 | Packing information | 2020-04-27 |
| Reliability_information_t2_sot404 | Reliability_information_t2_sot404 | Quality document | 2023-11-23 |
| T2_SOT404_PHB29N08T_Nexperia_Quality_document | PHB29N08T Quality document | Quality document | 2023-11-23 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PHB29N08T | PHB29N08T Spice model | SPICE model | 2014-03-04 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
如果您需要設(shè)計(jì)/技術(shù)支持，請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。
訂購、定價(jià)與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PHB29N08T | PHB29N08T,118 | 934057125118 | Active | SOT404_118 | 800 | 訂單產(chǎn)品 |
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PHB29N08T
N-channel TrenchMOS standard level FET
從安世半導(dǎo)體購買
| SKU | 庫存* | MOQ | 單位價(jià)格 | 數(shù)量 |
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