可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PMGD780SN | PMGD780SN,115 | 934057709115 | SOT363 | 訂單產(chǎn)品 |
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Click here for more informationPMGD780SN
Dual N-channel TrenchMOS standard level FET
Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.
不建議用在新設計中(NRND)。
Alternatives
Features and benefits
Dual device
Fast switching
Footprint 40 % smaller than SOT23
Low on-state resistance
Standard level threshold voltage
Surface-mounted package
Applications
Driver circuits
Switching in portable appliances
參數(shù)類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PMGD780SN
|
SOT363 | TSSOP6 | Not for design in | N | 2 | 60 | 20 | 920 | 1400 | 150 | 0.49 | 0.22 | 1.05 | 0.41 | 2 | N | 23 | 5 | 2011-01-24 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
|
PMGD780SN
|
PMGD780SN,115 (934057709115) |
Active | D7% |
TSSOP6 (SOT363) |
SOT363 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT363_115 |
文檔 (21)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PMGD780SN | Dual N-channel uTrenchMOS standard level FET | Data sheet | 2010-04-28 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN90032 | Low temperature soldering, application study | Application note | 2022-02-22 |
| Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
| SOT363 | 3D model for products with SOT363 package | Design support | 2018-12-05 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| TSSOP6_SOT363_mk | plastic, surface-mounted package; 6 leads; 1.3 mm pitch; 2 mm x 1.25 mm x 0.95 mm body | Marcom graphics | 2017-01-28 |
| SOT363 | plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body | Package information | 2022-06-01 |
| SOT363_115 | TSSOP6; Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2020-06-12 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PMGD780SN_16_04_2012 | PMGD780SN Spice model | SPICE model | 2013-12-13 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
| MAR_SOT363 | MAR_SOT363 Topmark | Top marking | 2013-06-03 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PMGD780SN_16_04_2012 | PMGD780SN Spice model | SPICE model | 2013-12-13 |
| SOT363 | 3D model for products with SOT363 package | Design support | 2018-12-05 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PMGD780SN | PMGD780SN,115 | 934057709115 | Active | SOT363_115 | 3,000 | 訂單產(chǎn)品 |
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PMGD780SN
Dual N-channel TrenchMOS standard level FET
從安世半導體購買
| SKU | 庫存* | MOQ | 單位價格 | 數(shù)量 |
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