3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package
The NX-HB-GAN039-BSCUL bottom-side cooled half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the basic study of the switching characteristics and efficiency achievable with Nexperia’s 650 V GaN FETs. The circuit can be configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high side & low side logic inputs. The high-voltage input and output can operate at up to 400 V DC, with a power output of up to 3.5 KW or more, dependent upon cooling, ambient temperature and switching frequency. The inductor provided is intended for efficient operation at 100 kHz, however, other inductors and frequencies may be used.
NX-HB-GAN039-BSCUL bottom-side cooled half-bridge evaluation board
Key features & benefits
The Gallium Nitride FET GAN039-650NBB (33 mΩ RDS(on) typ.) used in this evaluation board is a normally-off device, comprised of a high-voltage depletion-mode GaN HEMT (High Electron Mobility Transistor) combined with a tailored 30 V Si-FET in a cascode configuration.It is assembled as a die-on-die stack for best performance and minimized internal parasitics, housed in a 12 mm x 12 mm bottom-side cooled copper-clip package CCPAK.
Key features of GAN039-650NBB include:
- Very low switching losses
- Rugged gate with high threshold voltage, Vth = 4 V, enables single supply gate drive voltage 0 V to 10 - 12 V.
- Very good QGD/QGS << 1 ratio, protects against parasitic turn-on
- Minimal reverse-recovery
- Very low Rth
- Best in class third-quadrant off-state conduction performance for wide-bandgap devices
- Very low package inductance (≈1.3 nH @ 100 MHz)
Key applications
- Solar Inverters
- Energy Storage Systems
- Servo Drives
- Server/Telecom PSU
- Welding Inverters
板上的產(chǎn)品 (3)
| Type number | Description | Status | Quick access | |
|---|---|---|---|---|
|
GAN039-650NBB | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package | Production | |
|
74LVC1G17GW | Single Schmitt trigger buffer | Production | |
|
|
74HCT1G86GW | 2-input EXCLUSIVE-OR gate | Production |
相關(guān)板塊 (5)
| Board | Description | Type | Quick links | Shop link | |
|---|---|---|---|---|---|
|
NX-HB-GAN039-TSCUL-top-side-cooled-half-bridge-evaluation-board | 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package | Evaluation board | ||
|
NX-HB-GAN041UL-GAN041-650WSB-half-bridge-evaluation-board | Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW) | Evaluation board | ||
|
NX-DP-GAN039-TSC-Double-pulse-evaluation-board | Double pulse evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package | Evaluation board | ||
|
4-kW-analogue-bridgeless-totem-pole-PFC-evaluation-board | 4 kW analogue bridgeless totem-pole PFC evaluation board | Evaluation board | ||
|
nx-hb-gan111ul-half-bridge-evaluation-board | NX-HB-GAN111UL half-bridge evaluation board | Evaluation board |
板上的產(chǎn)品 (3)
| Type number | Description | Status | Quick access | |
|---|---|---|---|---|
|
|
GAN039-650NBB | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package | Production | |
|
|
74LVC1G17GW | Single Schmitt trigger buffer | Production | |
|
|
74HCT1G86GW | 2-input EXCLUSIVE-OR gate | Production |
相關(guān)板塊 (5)
| Board | Description | Type | Quick links | Shop link | |
|---|---|---|---|---|---|
|
|
NX-HB-GAN039-TSCUL-top-side-cooled-half-bridge-evaluation-board | 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package | Evaluation board | ||
|
|
NX-HB-GAN041UL-GAN041-650WSB-half-bridge-evaluation-board | Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW) | Evaluation board | ||
|
|
NX-DP-GAN039-TSC-Double-pulse-evaluation-board | Double pulse evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package | Evaluation board | ||
|
|
4-kW-analogue-bridgeless-totem-pole-PFC-evaluation-board | 4 kW analogue bridgeless totem-pole PFC evaluation board | Evaluation board | ||
|
|
nx-hb-gan111ul-half-bridge-evaluation-board | NX-HB-GAN111UL half-bridge evaluation board | Evaluation board |
文檔 (2)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| GaNFET_evaluation_board_Terms_Of_Use | GaN FET EVALUATION BOARD TERMS OF USE | Other type | 2023-10-10 |
| UM90007 | NX-HB-GAN039-BSCUL 3.5 kW half-bridge evaluation board with bottom-side cooled GaN FETs | User manual | 2024-08-21 |