粉嫩高清一区二区三区精品视频,精品九九九,国产XXX69麻豆国语对白,国产调教

雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

PDTA114TE

PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open

PNP Resistor-Equipped Transistors (RET) family in small plastic packages.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • 100 mA output current capability

  • Reduces component count

  • Built-in bias resistors

  • Reduces pick and place costs

  • Simplifies circuit design

  • AEC-Q101 qualified

Applications

  • Digital applications

  • Cost-saving alternative to BC857 series in digital applications

  • Control of IC inputs

  • Low current peripheral driver

參數(shù)類型

型號(hào) Package version Package name Size (mm)
PDTA114TE SOT416 SC-75 1.6 x 0.75 x 0.9

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào),(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
PDTA114TE PDTA114TE,115
(934051770115)
Obsolete SOT416
SC-75
(SOT416)
SOT416 SOT416_115

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
PDTA114TE PDTA114TE,115 PDTA114TE rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (5)

文件名稱 標(biāo)題 類型 日期
PDTA114T_SER PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open Data sheet 2007-04-19
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LSYMTRA Letter Symbols - Transistors; General Other type 1999-05-06
SOT416 plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body Package information 2020-04-21
PDTA114TE PDTA114TE SPICE model SPICE model 2024-08-27

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
PDTA114TE PDTA114TE SPICE model SPICE model 2024-08-27

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.