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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

NextPowerS3 MOSFETs

NextPowerS3 MOSFETs

Nexperia offers a "no compromise" parameter selection. Until now power engineers have had to choose between competing MOSFET capabilities, such as low RDS(on) vs. low QG(tot), or fast-switching vs. low spiking, ultimately leading to products that are compromised in terms of efficiency, size, and cost. NextPowerS3 is not the case. Managing to achieve a balance between all key parameters.

The NextPowerS3 family spans across the LFPAK package range, housed in LFPAK33 (SOT1210), LFPAK56 (SOT669), LFPAK56E (SOT1023) and LFPAK88 (SOT1235). The LFPAK packages are completely free of wirebonds, meaning they deliver a competitive RDS(on) (industry best in 25 V) as well as low Rth, low inductance and excellent board level reliability.

Suitable for a wide range of applications including high-efficiency power supplies for telecoms and cloud computing: Or-ing, hotswap, synchronous rectification, motor control and battery protection.

主要特性和優(yōu)勢(shì)

Features and benefits

  • Balanced RDS(on) and QG for class leading efficiency
  • Low RDS(on) (0.57 m? in LFPAK56)
  • Unique Schottky-Plus technology delivers low spiking without compromising efficiency or IDSS leakage
  • High reliability LFPAK packages: copper clip, solder die attach and qualified to 175 °C.
  • 380 A continuous current demonstrated
  • Very strong SOA

Video: The importance of SOA



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Parametric search

NextPowerS3 MOSFETs
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Products

MOSFETs

型號(hào) 描述 狀態(tài) 快速訪問
PSMN3R5-25MLD N-channel 25 V, 3.72 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Production
PSMN6R1-25MLD N-channel 25 V, 6.8 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Production
PSMN1R8-30MLH N-channel 30 V, 2.1 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology Production
PSMN1R6-30MLH N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology Production
PSMN4R2-30MLD N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Production
PSMN2R4-30MLD N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Production
PSMN1R5-25MLH N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology Production
PSMN2R0-25MLD N-channel 25 V, 2.1 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Production
PSMN7R5-30MLD N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Production
PSMN5R3-25MLD N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Production
PSMN1R0-40SSH N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMNR70-40SSH N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMN014-40HLD N-channel 40 V, 13.6 mOhm, logic level MOSFET in LFPAK56D using NextPowerS3 technology Production
PSMN1R0-25YLD N-channel 25 V, 1.0 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R4-30YLD N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R7-25YLD N-channel 25 V, 1.75 mOhm, 200 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN2R0-25YLD N-channel 25 V, 2.09 mΩ, 179 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R2-25YLD N-channel 25 V, 1.2 mΩ, 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN6R0-30YLD N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN7R5-30YLD N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN2R5-40YLD N-channel 40 V, 2.6 mΩ, 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN1R4-40YLD N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology Production
PSMN2R0-40YLD N-channel 40 V, 2.1 mΩ, 180 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMNR70-30YLH N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
PSMN1R7-40YLD N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN5R4-25YLD N-channel 25 V, 5.69 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN3R5-40YSB N-channel 40 V, 3.5 mOhm, 120 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology Production
PSMN2R4-30YLD N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN2R2-40YSD N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMNR58-30YLH N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMN2R5-40YLB N-channel 40 V, 2.6 mOhm, 160 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology Production
PSMNR51-25YLH N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMN1R2-30YLD N-channel 30 V, 1.2 mΩ, 250 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN3R0-30YLD N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R9-40YSD N-channel 40 V, 1.9 mΩ, 200 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN1R0-30YLD N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN0R9-30YLD N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN4R0-30YLD N-channel 30 V, 4.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN0R9-25YLD N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN3R2-40YLD N-channel 40 V, 3.3 mΩ, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMNR90-40YLH N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology Production
PSMN0R7-25YLD N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN2R8-40YSD N-channel 40 V, 2.8 mΩ, 160 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN1R5-40YSD N-channel 40 V, 1.5 mΩ, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN6R1-30YLD N-channel 30 V, 6.1 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R0-40YLD N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN1R0-40YSH N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology Production
PSMNR60-25YLH N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
PSMN1R7-40YLB N-channel 40 V, 1.8 mOhm, 200 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology Production
PSMN6R0-25YLD N-channel 25 V, 6.75 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN2R8-40YSB N-channel 40 V, 2.8 mOhm, 160 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology Production
PSMN2R0-40YLB N-channel 40 V, 2.1 mOhm, 180 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology Production
PSMN3R2-40YLB N-channel 40 V, 3.3 mOhm, 120 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology Production
PSMN3R5-40YSD N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN1R9-40YSB N-channel 40 V, 1.9 mOhm, 200 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology Production
PSMN2R2-40YSB N-channel 40 V, 2.2 mOhm, 180 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology Production
PSMN1R4-40YSH N-channel 40 V, 1.4 mOhm, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production

Documentation

文件名稱 標(biāo)題 類型 日期
vp_1381307205778_zh_CN.zip 恩智浦的NextPowerS3 MOSFET——帶軟恢復(fù)功能的超快速開關(guān)性能 Value proposition 2017-03-04
NextPowerS3_cleaner_image.png NextPowerS3 cleaner image Marcom graphics 2020-01-23
AN90011.pdf Half-bridge MOSFET switching and its impact on EMC Application note 2020-04-28
AN11158.pdf Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN90016.pdf Maximum continuous currents in NEXPERIA LFPAK power MOSFETs Application note 2020-09-03
AN11261.pdf RC Thermal Models Application note 2021-03-18
vp_1381307205778.zip NextPowerS3 MOSFETs Value proposition 2021-06-11
AN50014.pdf Understanding the MOSFET peak drain current rating Application note 2022-03-28
AN90003.pdf LFPAK MOSFET thermal design guide Application note 2023-08-22
AN11160.pdf Designing RC Snubbers Application note 2024-10-21

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